Related papers: Atomic Layer-controlled Nonlinear Terahertz Valley…
We present a comprehensive theoretical study of strain-engineered quantum transport in monolayer tungsten diselenide (WSe$_2$) in the presence of an electrostatic scalar potential. By incorporating strain effects within a low-energy Dirac…
Arbitrary manipulation of broadband terahertz waves with flexible polarization shaping at the source has great potential in expanding real applications such as imaging, information encryption, and all-optically coherent control of terahertz…
Two-dimensional sliding ferroelectrics, with their enhanced efficiencies of charge separation and tunability, constitute promising platforms for next-generation photovoltaic devices. However, recent systems predominantly exhibit dual…
Layered platinum tellurium (PtTe2) was recently synthesized with controllable layer numbers down to a monolayer limit. Using ab initio calculations based on anisotropic Midgal-Eliashberg formalism, we show that by rubidium (Rb)…
Chiral engineering of TeraHertz (THz) light fields and the use of the handedness of light in THz light-matter interactions promise many novel opportunities for advanced sensing and control of matter in this frequency range. Unlike…
The two-fold valley degeneracy in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) (Mo,W)(S,Se)2 is suitable for "valleytronics", the storage and manupulation of information utilizing the valley degree of…
An efficient approach to improve the thermoelectric performance of materials is to converge their electronic bands, which is known as band engineering. In this regard, lots of effort have been made to further improve the thermoelectric…
To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…
Engineered micro- or nano-structures based on nonlinear optical materials offer versatile opportunities for optoelectronic applications. While extensive efforts have been devoted to design tailored microcavities to promote and increase the…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
We report a large third order nonlinear optical response of palladium diselenide (PdSe2) films, a two dimensional (2D) noble metal dichalcogenide material. Both open aperture (OA) and closed aperture (CA) Z scan measurements are performed…
Compact terahertz (THz) functional devices are greatly sought after for high-speed wireless communication, biochemical sensing, and non-destructive inspection. However, conventional devices to generate and guide THz waves are afflicted with…
The unique optical and electronic properties of two-dimensional transition metal dichalcogenides (2D TMDs) make them promising materials for applications in (opto-)electronics, catalysis and more. Specifically, alloys of 2D TMDs have broad…
Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…
Two-dimensional (2D) high-temperature ferromagnetic materials are important for spintronic application. Fortunately, a highly-air-stable PdSe$_2$ monolayer semiconductor has been made through exfoliation from the layered bulk material. It…
Tungsten ditelluride (WTe2), a layered transition-metal dichalcogenide (TMD), has recently demonstrated an extremely large magnetoresistance effect, which is unique among TMDs. This fascinating feature seems to be correlated with its…
HfSe2 and ZrSe2 are newly discovered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) with promising properties for future nanoelectronics and optoelectronics. We theoretically revealed the electronic and optical…
InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure, direct or indirect. In general, different methods can be…
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…
Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in…