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Hexagonal boron nitride (hBN) has emerged as a compelling platform for both classical and quantum technologies. In particular, the past decade has witnessed a surge of novel ideas and developments, which may be overwhelming for newcomers to…
Quantum emitters in hexagonal boron nitride (hBN) that exhibit optically detected magnetic resonance (ODMR) signatures have recently garnered significant attention as an emerging solid-state platform for quantum technologies. However, the…
Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as…
Quantum emitters in hexagonal boron nitride (hBN) have gained significant attention due to a wide range of defects that offer high quantum efficiency and single-photon purity at room temperature. Most theoretical studies on hBN defects…
We derive electronic tight-binding Hamiltonians for strained graphene, hexagonal boron nitride and transition metal dichalcogenides based on Wannier transformation of {\it ab initio} density functional theory calculations. Our microscopic…
Defect states in 2D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods…
Novel materials with tunable magnetic states play a significant role in the development of next-generation spintronic devices. In this paper, we examine the role of biaxial strain on the electronic properties of vacancy-decorated hexagonal…
Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We…
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining…
Mechanically isolated defect centers in hexagonal boron nitride are promising coherent quantum emitters, yet spectral instabilities persist, and their spin-related nature remains unclear. Here we investigate a single mechanically isolated…
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely…
Defect-based single-photon emitters (SPEs) in hexagonal boron nitride (h-BN) are promising platforms for integrated quantum photonics; however, the absence of identified emitters operating at telecom wavelengths remains a critical…
The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited…
Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as…
The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we…
Atom-like defects in hexagonal boron nitride (hBN) provide room-temperature single-photon emission and coherent spin states, making them attractive for quantum-computing and -sensing applications. However, their random spatial and spectral…
Color centers in h-BN are among the brightest emission centers known yet the origins of these emission centers are not well understood. Here, using first-principles calculations in combination with the generating function method, we…
The research focuses on the explanation of a phenomenon observed in the spectra of electron nuclear resonance (ENDOR) pertaining to nitrogen atoms adjacent to the boron vacancy (VB) defect in hexagonal boron nitride (hBN). The phenomenon is…
Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy ($\mathrm{V_B^-}$) defects in…
Negatively charged boron vacancies (VB-) in hexagonal boron nitride (h-BN) are a rapidly developing qubit platform in two-dimensional materials for solid-state quantum applications. However, their spin coherence time (T2) is very short,…