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The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite…

Mesoscale and Nanoscale Physics · Physics 2022-08-23 Daniil Domaretskiy , Marc Philippi , Marco Gibertini , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Alberto F. Morpurgo

The development of high performance transparent conducting oxides (TCOs) is critical to many technologies from transparent electronics to solar cells. While n-type TCOs are present in many devices, current p-type TCOs are not largely…

Materials Science · Physics 2017-04-05 Geoffroy Hautier , Anna Miglio , Gerbrand Ceder , Gian-Marco Rignanese , Xavier Gonze

Ta$_{3}$N$_{5}$ is among the most intensively studied photoanode materials for solar-driven water oxidation, yet its performance often remains limited by short carrier lifetimes and defect mediated recombination. Although transient…

The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin oxide, SnO, and copper oxide, Cu$_2$O. The TFT photoconduction…

Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 L. Braginsky

Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional…

Materials Science · Physics 2014-07-02 Vladan Stevanovic , Andriy Zakutayev , Stephan Lany

Several IV-VI semiconductor compounds made of heavy atoms, such as Pb$_{1-x}$Sn$_{x}$Te, may undergo band-inversion at the $L$ point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to…

Mesoscale and Nanoscale Physics · Physics 2018-05-28 A. Diaz-Fernandez , N. del Valle , F. Dominguez-Adame

Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band…

Materials Science · Physics 2019-06-04 Fernando P. Sabino , Xuefen Cai , Su-Huai Wei , Anderson Janotti

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…

Materials Science · Physics 2015-05-18 Wolfgang L. Kalb , Simon Haas , Cornelius Krellner , Thomas Mathis , Bertram Batlogg

Opticcal conductivity spectra $\sigma_1(\omega)$ of Nd2-xCexCuO4 thin films, measured by the reflectance-transmittance method (R-T method) which has been proposed to investigate far-infrared spectroscopy, are investigated based on the…

We propose a model of quasiparticle tunneling across the high-$T_c$ superconductor-insulator-normal metal junction based on the different mechanisms for tunneling of electrons at positive bias and dissociating polaronic Cooper pairs and…

Superconductivity · Physics 2011-06-08 S. Dzhumanov , O. K. Ganiev , Sh. S. Djumanov

Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic…

Renewable energy resources have emerged as the best alternatives to fossil fuel energy which are rapidly declining with time. Here, eight valence-electron count Half-Heusler(HH) alloys have been studied using reliable first principles…

Materials Science · Physics 2023-06-22 Bhawna Sahni , Vikram , Jiban Kangsabanik , Aftab Alam

Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive…

We report the first study of the optical conductivity of MgB2 covering the range of its superconducting energy gap. Terahertz time-domain spectroscopy is utilized to determine the complex, frequency-dependent conductivity of thin films. The…

Identifying topological insulators and semimetals often focuses on their surface states, using spectroscopic methods such as angle-resolved photoemission spectroscopy or scanning tunneling microscopy. In contrast, studying the topological…

Mesoscale and Nanoscale Physics · Physics 2018-07-24 Yiyuan Chen , Hai-Zhou Lu , X. C. Xie

Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy…

Materials Science · Physics 2020-10-09 Kingsley O. Egbo , Chao Ping Liu , Chinedu E. Ekuma , Kin Man Yu

Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well…

Applied Physics · Physics 2022-06-10 Himani Jawa , Sayantan Ghosh , Abin Varghese , Srilagna Sahoo , Saurabh Lodha

Transparent conducting oxides (TCOs) are essential to many technologies including solar cells and transparent electronics. The search for high performance n- or p-type TCOs has mainly focused on materials offering transport through band…

Materials Science · Physics 2019-06-19 Guillaume Brunin , Gian-Marco Rignanese , Geoffroy Hautier

We show that electron-hole correlation can be used to tune interband and intraband optical transition rates in semiconductor nanostructures with at least one weakly confined direction. The valence-to-conduction band transition rate can be…

Mesoscale and Nanoscale Physics · Physics 2018-08-24 Josep Planelles , Alexander W. Achtstein , Riccardo Scott , Nina Owschimikow , Juan I. Climente