English
Related papers

Related papers: Bounds to electron spin qubit variability for scal…

200 papers

We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a…

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…

Mesoscale and Nanoscale Physics · Physics 2020-01-14 H. G. J. Eenink , L. Petit , W. I. L. Lawrie , J. S. Clarke , L. M. K. Vandersypen , M. Veldhorst

Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end…

Mesoscale and Nanoscale Physics · Physics 2026-02-05 Christopher David White , Anthony Sigillito , Michael J. Gullans

Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014,…

Mesoscale and Nanoscale Physics · Physics 2018-01-18 M. Veldhorst , H. G. J. Eenink , C. H. Yang , A. S. Dzurak

We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…

Spin-orbit coupling in solids describes an interaction between an electron's spin, an internal quantum-mechanical degree of freedom, with its linear momentum, an external property. Spin-orbit interaction, due to its relativistic nature, is…

Mesoscale and Nanoscale Physics · Physics 2014-08-07 J. Shabani , Younghyun Kim , A. P. McFadden , R. M. Lutchyn , C. Nayak , C. J. palmstrøm

Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…

In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Serguei Vorojtsov

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…

We survey recent work on designing and evaluating quantum computing implementations based on nuclear or bound-electron spins in semiconductor heterostructures at low temperatures and in high magnetic fields. General overview is followed by…

Mesoscale and Nanoscale Physics · Physics 2010-09-22 Vladimir Privman , Dima Mozyrsky , Israel D. Vagner

Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information…

Solid-state quantum light sources offer a scalable pathway for interfacing stationary spin qubits with flying photonic qubits, forming the backbone of future quantum networks. Telecom-band spin-photonic qubits, operating in the 1260-1675 nm…

Quantum Physics · Physics 2025-12-09 Md Sakibul Islam , Kuldeep Singh , Yunhe Zhao , Nitesh Singh , Wayesh Qarony

The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…

Mesoscale and Nanoscale Physics · Physics 2024-05-07 Jonas R. F. Lima , Guido Burkard

We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be…

Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…

Applied Physics · Physics 2026-05-05 Megan Powell , Euan Parry , Conor McGeough , Alexander Zotov , Alessandro Rossi

The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance.…

With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…

Mesoscale and Nanoscale Physics · Physics 2019-08-02 Xinyu Zhao , Xuedong Hu

We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…

Mesoscale and Nanoscale Physics · Physics 2018-05-02 Léo Bourdet , Yann-Michel Niquet

An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. M. Tyryshkin , S. A. Lyon , W. Jantsch , F. Schaeffler
‹ Prev 1 4 5 6 7 8 10 Next ›