Related papers: Quasi-particle propagation across semiconductor-Mo…
Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasi-particle…
Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a…
A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…
We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various…
We analyze the quench dynamics of a one-dimensional bosonic Mott insulator and focus on the time evolution of density correlations. For these we identify a pronounced propagation front, the velocity of which, once correctly extrapolated at…
We consider a heterostructure of a metal and a barrier with onsite correlation at half filling using unrestricted Hartree Fock. We find that above a certain value of correlation strength in the barrier planes, the system is a Mott…
In this paper, we studied a generalized Bose-Hubbard model on a checkerboard lattice with topologically nontrivial flat-band. We used mean-field method to decouple the model Hamiltonian and obtained phase diagram by Landau theory of…
We consider a boundary between a Mott insulator and a superfluid region of a Bose-Hubbard model at unit filling. Initially both regions are decoupled and cooled to their respective ground states. We show that, after switching on a small…
For superconducting quantum processors consisting of low anharmonicity qubits such as transmons we give a complete microwave description of the system in the qubit subspace. We assume that the qubits are dispersively coupled to a…
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…
For the Mott insulator state of the Fermi-Hubbard model in the strong-coupling limit, we study the interaction between quasi-particles in the form of doublons and holons. Comparing different methods -- the hierarchy of correlations,…
The breakdown of the Mott insulator is studied when the dissipative tunneling into the environment is introduced to the system. By exactly solving the one-dimensional asymmetric Hubbard model, we show how such a breakdown of the Mott…
We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…
The ground state of a one-dimensional Hubbard model having the next-nearest neighbor hopping (t') as well as the nearest-neighbor one (t) is numerically investigated at half-filling. A quantum Monte Carlo result shows a slowly decaying…
We analyze the propagation of correlations after a sudden interaction change in a strongly interacting quantum system in contact with an environment. In particular, we consider an interaction quench in the Bose-Hubbard model, deep within…
The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…
Recently, the field of strongly correlated electrons has begun an intense search for a correlation induced topological insulating phase. An example is the quadratic band touching point which arises in a checkerboard lattice at half-filling,…
In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…
Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…
In condensed-matter physics, electronic Mott insulators have triggered considerable research due to their intricate relation with high-temperature superconductors. However, unlike atomic systems for which Mott phases were recently shown for…