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Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
The current manuscript highlights the preparation of NiFe2O4 nanoparticles by adopting sol-gel auto combustion route. The prime focus of this study is to investigate the impact of gamma irradiation on the microstructural, morphological,…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
A nanoscale dielectric gap clamped between two metal electrodes may undergo a large resistance change from insulating to highly conducting upon applying an electrical stress. This sudden resistive switching effect is largely exploited in…
Optical memristors are innovative devices that enable the integration of electro-optical functionalities - such as light modulation, multilevel optical memory, and nonvolatile reprogramming - into neuromorphic networks. Recently, their…
The advent of memristors and resistive switching has transformed solid state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that…
We study memristive effects in Kagom\'{e} nanopatterned permalloy. We observe that at low frequencies a thermistor effect is present, a phenomenon arising due to the lithography and absent in similar experiments for thin films. However, we…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined…
In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain…
Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
This study explores the impact of organic cations in bismuth iodide complexes on their memristive behavior in metal-insulator-metal (MIM) type thin-layer devices. The presence of electron-donating and electron withdrawing functional groups…