Related papers: An efficient model algorithm for two-dimensional f…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…
The damping of single-particle degrees of freedom in strongly correlated two-dimensional Fermi systems is analyzed. Suppression of the scattering amplitude due to the damping effects is shown to play a key role in preserving the validity of…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
This work investigates two physics-based models that simulate the non-linear partial differential algebraic equations describing an electric double layer supercapacitor. In one model the linear dependence between electrolyte concentration…
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
We propose a feasible experimental test of a 1-D version of the Fermi problem using superconducting qubits. We give an explicit non-perturbative proof of strict causality in this model, showing that the probability of excitation of a…
We consider the competition of magnetic and charge ordering in high-Tc cuprates within the framework of the simplified static 2D spin-pseudospin model. This model is equivalent to the 2D dilute antiferromagnetic (AFM) Ising model with…
We introduce an efficient finite-element approach for large-scale real-space pseudopotential density functional theory (DFT) calculations incorporating noncollinear magnetism and spin-orbit coupling. The approach, implemented within the…
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
Simulations of quantum transport in coherent conductors have evolved into mature techniques that are used in fields of physics ranging from electrical engineering to quantum nanoelectronics and material science. The most efficient…
A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and…