Related papers: Comparative Study of Semiconductors for Terahertz …
Plasmonic metamaterials and metasurfaces offer new opportunities in developing high performance terahertz emitters and detectors beyond the limitations of conventional nonlinear materials. However, simple meta-atoms for second-order…
Chip-based terahertz (THz) devices are emerging as versatile tools for manipulating mm-wave frequencies in the context of integrated high-speed communication technologies for potential sixth-generation (6G) wireless applications. The…
Graphene is conceivably the most nonlinear optoelectronic material. Its nonlinear optical coefficients in the terahertz (THz) frequency range surpass those of other materials by many orders of magnitude. This, in particular, allows one to…
The majority of sources of coherent optical radiation rely on laser oscillators driven by population inversion. Despite their technological importance in communications, medicine, industry, and other fields, it remains a challenge to access…
We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear…
Few-layer selenium and tellurium films have been recently prepared, and they provide a new platform to explore novel properties of two-dimensional (2D) elemental materials. In this work, we have performed a systematic first-principles study…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a…
Spintronic THz emitters (STE) are efficient THz sources constructed using thin heavy-metal (HM) and ferromagnetic-metal (FM) layers. To improve the performance of the STE, different structuring methods (trilayers, stacked bilayers) have…
Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between…
Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…
Half-Heusler compounds have emerged as promising thermoelectric materials that offer huge compositional space to tune their thermoelectric performance. A class of stable half Heusler compounds formed from elements of three specific groups…
We propose an all-optical Knife Edge characterization technique and we demonstrate its working principle by characterizing the sub-{\lambda} features of a spatially modulated Terahertz source directly on the nonlinear crystal employed for…
Ultrafast charge transport in strongly biased semiconductors is at the heart of highspeed electronics, electro-optics, and fundamental solid-state physics. Intense light pulses in the terahertz (THz) spectral range have opened fascinating…
We discuss terahertz pump-probe experiments in hBN from the perspective of Floquet optical materials and photonic time crystals. Anisotropic nature of this material results in a large separation of frequencies of in-plane and out-of-plane…
The efficient generation of terahertz (THz) waves in two-dimensional (2D) MXene layers driven by near-infrared femtosecond laser pulses is demonstrated through predictive simulations. Employing a novel hydrodynamic model that…
Exfoliation and stacking of two-dimensional (2D) van der Waals (vdW) crystals have created unprecedented opportunities in the discovery of quantum phases. A major obstacle to the advancement of this field is the limited spectroscopic access…
SnxSey crystalline compounds consisting of Sn and Se atoms of varying composition are systematically investigated at pressures from 0 to 100 GPa using the first-principles evolutionary crystal structure search method based on density…
Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second only to silicon. However, recent direct experimental…
It is known that the alignment of an high-energy e- beam with specific crystal directions leads to a significant increase of the coherent radiation emission. This enhancement can be exploited to create an intense photon source. An elective…
Half-Heusler compounds (space group Fm3m) has garnered increasing attention in recent years in the thermoelectric community. Three decades ago, refractory RNiSn half-Heusler compounds (R represents refractory metals such as Hf, Zr, Ti) were…