Related papers: Comparative Study of Semiconductors for Terahertz …
Topological Insulator-based devices can transport electrons/photons at the surfaces of materials without any back reflections, even in the presence of obstacles. Topological properties have recently been studied using non-reciprocal…
We are reporting on terahertz generation from organic crystal BNA using a 1.15 to 1.55 um near infrared pump. We observed a very large emission spectrum extending up to 7 THz, compared to 2.5 THz from Ti:Sa pump in previous reports. The…
Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design…
As the variation of temperature alters the intrinsic carrier density in a semiconductor, numerical simulations indicate that the consequent variation of the relative permittivity in the terahertz regime provides a way to realize thermally…
This study explores the emergence of superconductivity in high-quality ZrTe$_{2-x}$Se$_x$ crystals, grown via the isothermal chemical vapor transport (ICVT) technique. Resistive, structural, and thermal measurements reveal that substituting…
We report a THz emitter with excellent performances based on nonmagnetic (NM) and ferromagnetic (FM) heterostructures. The spin currents are first excited by the femtosecond laser beam in the NM/FM bilayer, and then transient charge…
THz pulses are generated from femtosecond pulse-excited ferromagnetic/nonmagnetic spintronic heterostructures via inverse spin Hall effect. The contribution from ultrafast demagnetization/remagnetization is extremely weak, in the…
The goal of this report is to study the conditions for efficient THz generation using Frequency Difference Generation principle. In particular, two CW IR beams are used together with a periodically poled lithium niobate crystal in order to…
Using a canonical pump-probe experimental technique, we studied the terahertz (THz) waves generation and detection via optical rectification and mixing in Czochralski-grown periodically poled Mg:Y:LiNbO3 (PPLN) crystals. THz waves with…
Graphene has unique properties paving the way for groundbreaking future applications. Its large optical nonlinearity and ease of integration in devices notably makes it an ideal candidate to become a key component for all-optical switching…
One-dimensional selenium and tellurium crystalize in helical chainlike structures and thus exhibit fascinating properties. By performing first-principles calculations, we have researched the linear and nonlinear optical (NLO) properties of…
The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal conductivity. The challenge is to optimize these interdependent…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
We demonstrate record conversion efficiencies of up to 0.9 percent for narrowband (1 percent relative bandwidth) THz generation by strongly-cascaded difference frequency generation. These results are achieved using a novel laser source,…
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…
High peak and average power free-electron lasers (FELs) in the terahertz region (THz) require small diameter, low-emittance, and high voltage electron beams. This paper presents two 1.5-2 MV, 100-200 A, thermionic cathode electron source…
Semiconductor materials play an important role as transducers of electrical energy in betavoltaic batteries. Optimal selection of effective factors will increase the efficiency of these batteries. In this study, based on common…
Nonlinear processes can offer pathways to next-generation sensors and frequency mixing devices to overcome modern imaging, detection, and communication challenges. In this article, we report on strong second and third-order nonlinear…
Semiconductor superlattices are strongly nonlinear media offering several technological challenges associated with the generation of high-frequency Gigahertz radiation and very effective frequency multiplication up to several Terahertz.…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…