Related papers: Optical, electronic and structural properties of S…
We report on the structural properties of ScAlMgO4 studied under quasi-hydrostatic pressure using synchrotron high-pressure x-ray diffraction up to 40 GPa. We also report on single-crystal studies of ScAlMgO4 performed at 300 K and 100 K.…
ScxAl1-xN is an emerging III-nitride material known for its high piezoelectric coefficient and ferroelectric properties. Integration of wide-bandgap ScxAl1-xN with GaN is particularly attractive for quantum photonic devices. Achieving low…
Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire…
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile…
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…
In present study, Tetragonal Mn$_3$O$_4$ thin films of different coating layers of 2, 4, 6, 8, and 10 were prepared on the microscopic glass slides by the spin-coating method. X-ray diffraction, Raman spectroscopy, and ultra-violet visible…
An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic…
Quaternary chalcogenide compositions have been broadly explored due to their promising potential for various optoelectronic applications. The band structure, density of states and optical properties of CuZn2InS4 and CuZn2GaS4 for kesterite…
Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite $Sc_xAl_{1-x}N$ layers on (0001) GaN to be x = 0.14+/-0.01. 100-nm thick $Sc_xAl_{1-x}N$ films (x = 0.09 - 0.19) were…
Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build a practicable quantum computer. One potential path towards…
Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…
A simple and robust method able to predict, with high accuracy, the optical properties of single and multi-layer nanostructures is presented. The method exploits a COMSOL Multiphysics simulation platform and it has been validated by three…
Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam…
Radiation detection is vital for space, medical imaging, homeland security, and environmental monitoring applications. In the past, the Monte Carlo radiation transport toolkit, Geant4, has been employed to enable the effective development…
Computational searching and screening of new functional materials exploiting earth abundant elements can accelerate developments of their energy applications. Based on a state-of-the-art materials search algorithm and ab initio…
We have studied growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown both on GaAs substrates and on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic…
Plasmonic devices have advanced significantly in the past decade. Being one of the most intriguing devices, plamonic nanolasers plays an important role in biomedicine, chemical sensor, information technology, and optical integrated…
Structural and optical properties of several high light output halide scintillators and closely related materials are presented based on first principles calculations. The optical properties are based on the Engel-Vosko generalized gradient…
Transparent conducting oxides are highly doped semiconductors that exhibit favourable characteristics when compared to metals, including reduced material losses, tuneable electronic and optical properties, and enhanced damage thresholds.…
Atomically transparent vertically aligned ZnO-based van der Waals material have been developed by surface passivation and encapsulation with atomic layers of MgO using materials by design; the physical properties investigated. The…