Related papers: Current-Induced Metallization and Valence Transiti…
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the…
The I-Mn-V antiferromagnet, NaMnBi, develops a very large positive magnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing a semiconductor-to-metal transition (SMT). In the absence of an SMT, a modest (20%) MR is achieved.…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a…
The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…
It was recently reported that a continuous electric current is a powerful control parameter to trigger changes in the electronic structure and metal-insulator transitions (MITs) in Ca2RuO4. However, the spatial evolution of the MIT and the…
We study the dynamics of spin valves consisting of two layers of magnetic insulators separated by a normal metal in the macrospin model. A current through the spacer generates a spin Hall current that can actuate the magnetization via the…
The quantum spin liquid candidate NaYbSe$_2$ was recently reported to exhibit a Mott transition under pressure. Superconductivity was observed in the high-pressure metallic phase, raising the question concerning its relation with the…
We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one…
The underlying mechanism of the metal-to-insulator transition (MIT) in BaVS$_3$ is investigated, using dynamical mean-field theory in combination with density functional theory. It is shown that correlation effects are responsible for a…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
The phonon dispersion curve of SmS under pressure was studied by inelastic x-ray scattering around the pressure-induced valence transition. A significant softening of the longitudinal acoustic modes propagating along the [111] direction was…
Using focused helium ion beam (FHIB) irradiation, we fabricated in-plane, high-Tc YBCO Josephson junctions. By varying the dose of the irradiation, we tune the junction barriers from metallic (SNS) to insulating (SIS) and investigate how…
This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics…
We report a comprehensive study of pressure-induced evolution of the magnetism and development of superconductivity (SC) in MnBi8Te13, a promising ambient pressure, ferromagnetic (FM) topological insulator candidate. By employing…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…
We report on systematic investigation of hot carrier dynamics in Ti4O7 by ultrafast time-resolved optical reflectivity. We find the transient indication for its two-step insulator-metal (I-M) transition, in which two phase transitions occur…
Among the complex many-body systems, the metal-insulator transition stands out as a cornerstone and a particularly fertile ground for scientific inquiry. The established models including Mott insulator, Anderson localization and Peierls…
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…
Based on ab initio calculations and metadynamics simulations, we predict that 2H-MoS$_2$, a layered insulator, will metallize under pressures in excess of 20-30 GPa. In the same pressure range, simulations and enthalpy optimization predict…