Related papers: Mott-Insulator Ca2RuO4 under a static external ele…
We have investigated the electronic structure of Sr2IrO4 within the density-functional theory using the generalized gradient approximation while taking into account strong Coulomb correlations in the framework of the fully relativistic…
Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…
Protected by the interplay of on-site Coulomb interactions and spin-orbit coupling, Sr$_2$IrO$_4$ at high pressure is a rare example of a Mott insulator with a paramagnetic ground state. Here, using optical Raman scattering, we measure both…
We have investigated the in-plane uniaxial pressure effect on the antiferromagnetic Mott insulator Ca2RuO4 from resistivity and magnetization measurements. We succeeded in inducing the ferromagnetic metallic phase at lower critical pressure…
Neutron diffraction measurements are presented exploring the magnetic and structural phase behaviors of the candidate J$_{eff}=1/2$ Mott insulating iridate Sr$_2$IrO$_4$. Comparisons are drawn between the correlated magnetism in this single…
Sr2IrO4 exhibits a novel insulating state assisted by spin-orbit interactions. A series of polycrystalline samples of Sr2-xIrO4 have been synthesized. It is found that deep Sr-vacancies of Sr2-xIrO4 greatly reduce the rotation of IrO6…
The standard view is that at low energies Mott insulators exhibit only magnetic properties while charge degrees of freedom are frozen out as the electrons become localized by a strong Coulomb repulsion. We demonstrate that this is in…
Mott insulators provide stable quantum states and long coherence times to due to small number fluctuations, making them good candidates for quantum memory and atomic circuits. We propose a proof-of-principle for a 1D Mott switch using an…
We present a muon spin relaxation study of the Mott transition in BaCoS_2 using two independent control parameters: (i) pressure p to tune the electronic bandwidth and (ii) Ni-substitution x on the Co site to tune the band filling. For both…
In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and optical properties. A fundamental question in these materials…
Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an…
If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…
Sr2IrO4 and Sr3Ir2O7 form two families of spin-orbit Mott insulators with quite different charge gaps and an antiferromagnetic (AF) ground state. This offers a unique opportunity to study the impact of long-range magnetic order in Mott…
Complex systems are characterized by strong coupling between different microscopic degrees of freedom. Photoexcitation of such materials can drive them into new transient and long-lived hidden phases that may not have any counterparts in…
A new-type structural transition has been found in Li2RuO3 with honeycomb lattice of edge-sharing RuO6-octahedra. With decreasing temperature T, the electrical resistivity exhibits an anomalous increase at T=Tc~540 K, suggesting the (metal…
We investigate the hole dynamics in two prototypical high temperature superconducting systems: La$_{2-x}$Sr$_{x}$CuO$_{4}$ and YBa$_{2}$Cu$_{3}% $O$_{y}$ using a combination of DC transport and infrared spectroscopy. By exploring the…
Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the…
Oxygen vacancies are a common source of excess electrons in complex oxides. In Mott insulators these additional electrons can induce a metal-insulator transition (MIT), fundamentally altering the electronic properties of the system. Here we…
Raman scattering experiments on stoichiometric, Mott-insulating LaTiO$_3$ over a wide range of excitation energies reveal a broad electronic continuum which is featureless in the paramagnetic state, but develops a gap of $\sim 800$…
We report a high-resolution resonant inelastic x-ray scattering study of La2CuO4. A number of spectral features are identified that were not clearly visible in earlier lower-resolution data. The momentum dependence of the spectral weight…