Related papers: DSAC: Low-Cost RowHammer Mitigation Using In-DRAM …

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process…

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the…

DRAM scaling has exacerbated the RowHammer vulnerability. To counter this, JEDEC recently introduced Per Row Activation Counting (PRAC) with the Alert Back-Off protocol as an optional DDR5 feature. While promising, PRAC requires per-row…

This paper focuses on mitigating DRAM Rowhammer attacks. In recent years, solutions like TRR have been deployed in DDR4 DRAM to track aggressor rows and then issue a mitigative action by refreshing neighboring victim rows. Unfortunately,…

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips…

As DRAM scaling exacerbates RowHammer, DDR5 introduces per-row activation counting (PRAC) to track aggressor activity. However, PRAC indiscriminately increments counters on every activation -- including benign refreshes -- while relying…

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

The Rowhammer vulnerability poses an increasing challenge with newer generations of DRAM and aggressive technology scaling. Existing mitigation techniques, such as Graphene, Twice, and Hydra, primarily rely on tracking activation counts for…

This paper challenges the existing victim-focused counter-based RowHammer detection mechanisms by experimentally demonstrating a novel multi-sided fault injection attack technique called Threshold Breaker. This mechanism can effectively…

We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer…

As Dynamic Random Access Memories (DRAM) scale, they are becoming increasingly susceptible to Row Hammer. By rapidly activating rows of DRAM cells (aggressor rows), attackers can exploit inter-cell interference through Row Hammer to flip…

As DRAM density increases, Rowhammer becomes more severe due to heightened charge leakage, reducing the number of activations needed to induce bit flips. The DDR5 standard addresses this threat with in-DRAM per-row activation counters…

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

RowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has…

As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…