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Electron doping is an excellent tuning knob to explore different phases of matter in two-dimensional (2D) materials. For example, tuning the Fermi level at a van Hove singularity in twisted bilayer graphene can enhance electron-electron…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak…
We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography…
The two-dimensional (2D) homogeneous electron gas (HEG) is a fundamental model in quantum many-body physics. It is important to theoretical and computational studies, where exchange-correlation energies computed in it serve as the…
Two-dimensional (2D) lateral heterojunctions of transition metal dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting TMDC layers in their common H -structure have a nonzero in-plane electric polarization, which is…
We introduce one- and two-dimensional (1D and 2D) models of parity-time ($% \mathcal{PT}$) -symmetric couplers with the mutually balanced linear gain and loss applied to the two cores, and cubic-quintic (CQ) nonlinearity acting in each one.…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
An electrokinetically-driven deterministic lateral displacement (e-DLD) device is proposed for the continuous, two-dimensional fractionation of suspensions in microfluidic platforms. The suspended species are driven through an array of…
The frequency dependence of the dielectric loss angle for a metal-insulator composite was shown previously to be an efficient method to experimentally determine the percolation threshold. The statistical properties of this angle are found…
The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…
Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we…
Lateral two-dimensional (2D) transitional metal dichalcogenide (TMD) heterostructures have recently attracted a wide attention as promising materials for optoelectronic nanodevices. Due to the nanoscale width of lateral heterojunctions, the…
Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…
Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…
Fundamental aspects of ultracold collisions between identical bosonic or fermionic dipoles are studied under quasi-two-dimensional (Q2D) confinement. In the strongly dipolar regime, bosonic and fermion species are found to share important…
We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
We have measured the optical constants of GaMnAs from 0.62 eV to 6 eV, using spectroscopic ellipsometry. The second derivatives of the dielectric function are examined through a critical point analysis. The E1 critical point shifts to…