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Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature.…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze…
Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution,…
Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
Thermocurrent flowing through a single-molecule device contains valuable information about the quantum properties of the molecular structure and, in particular, on its electronic and phononic excitation spectra, and entropy. Furthermore,…
High-stress silicon nitride nanostrings are a promising system for sensing applications because of their ultra-high mechanical quality factors (Qs). By performing thermomechanical calibration across multiple vibrational modes, we are able…
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…
The electronic structures of zig-zag and arm-chair single-walled carbon nanotubes interacting with a transitional-metal atomic nanowire of Ni have been determined. The Ni nanowire creates a large electron density of states (DOS)at the Fermi…
The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…
Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the…
Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early…
Phase-transforming ferroelectric materials are widely used in energy harvesting and conversion devices. However, the functionality of these devices is significantly impeded by electrical leakage at high temperatures. In this study, we…
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and…
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here,…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…