Related papers: Ru$_{2-x}$Mn$_{1+x}$Al thin films
The half-Heusler compound CuMnSb, the first antiferromagnet (AFM) in the Mn-based class of Heuslers and half-Heuslers that contains several conventional and half metallic ferromagnets, shows a peculiar stability of its magnetic order in…
Cubic Half-Heusler Cu$_{1-x}$Co$_x$MnSb (0 $\leq$ $x$ $\leq$ 0.1) compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic…
In this paper, we investigated the Co2TiX (X = Ge, Sn) Heusler alloys by structural, magnetic and spin polarization measurements to probe the half-metallic nature. Alloys are synthesized using the arc melting technique, and found to exist…
We investigate the effect of Mn substitution in Fe$_2$Ti$_{1-x}$Mn$_x$Sn on electronic structure and magnetic and electrical transport properties. The spin-polarized density of states calculations using density-functional theory (DFT)…
We present electrical transport data for single-crystalline Co$_2$FeSi which provide clear-cut evidence that this Heusler compound is truly a half-metallic ferromagnet, i.e. it possesses perfect spin-polarization. More specifically, the…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant…
Polycrystalline Ni2.18Mn0.82Ga Heusler alloys with a coupled magnetostructural transition are studied by differential scanning calorimetry, magnetic and resistivity measurements. Coupling of the magnetic and structural subsystems results in…
Spin semimetals are amongst the most recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel and semimetallic feature in the other, thus facilitating tunable spin transport. Here, we report…
Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and halfmetallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a bandgap in one of the spin…
Many Heusler compounds possess magnetic properties well-suited for applications as spintronic materials. The pseudo-binary Mn$_{0.5}$Fe$_{0.5}$Ru$_2$Sn, formed as a solid solution of two full Heuslers, has recently been shown to exhibit…
The random substitutional solid solution between the antiferromagnetic (AFM) full-Heusler alloy Ru$_2$MnSn and the ferromagnetic (FM) full-Heusler alloy Ru$_2$FeSn provides a rare opportunity to study FM-AFM phase competition in a…
The organic spinterface describes the spin-polarized properties that develop, due to charge transfer, at the interface between a ferromagnetic metal (FM) and the molecules of an organic semiconductor. Yet, if the latter is also magnetic…
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron…
We have grown thin films of the Heusler compound Co_2FeSi by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and L2_1 ordered growth. On Al_2O_3 (11-20) substrates, the film growth is…
10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according…
The pursuit of efficient spin-polarization in quaternary Heusler alloys with the general formula $XX'YZ$ (where X, $X'$, and Y are transition metals and Z is a p-block element), has been a subject of significant scientific interest. While…
The half metallic and magnetic properties of Zr2RhZ (Z = Al, Ga, In) alloys with an Hg2CuTi-type structure were systematically investigated using the first-principle calculations. Zr2RhZ (Z = Al, Ga, In) alloys are predicted to be…
Heusler alloy Co2FeAl was employed as ferromagnetic layers in Co2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm takes on strongly antiferromagnetic…
This paper shows the correlation between chemical order, lattice strains and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization has been performed using vector field…