Related papers: Mott's law for the v.r.h. random resistor network …
Mott variable-range hopping is a fundamental mechanism for electron transport in disordered solids in the regime of strong Anderson localization. We give a brief description of this mechanism, recall some results concerning the behavior of…
We consider a random walk on the support of a stationary simple point process on $R^d$, $d\geq 2$ which satisfies a mixing condition w.r.t.the translations or has a strictly positive density uniformly on large enough cubes. Furthermore the…
We consider a random walk on the support of an ergodic simple point process on R^d, d>1, furnished with independent energy marks. The jump rates of the random walk decay exponentially in the jump length and depend on the energy marks via a…
Mott variable range hopping is a fundamental mechanism for low-temperature electron conduction in disordered solids in the regime of Anderson localization. In a mean field approximation, it reduces to a random walk (shortly, Mott random…
Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the…
We consider a random walk on a homogeneous Poisson point process with energy marks. The jump rates decay exponentially in the A-power of the jump length and depend on the energy marks via a Boltzmann--like factor. The case A=1 corresponds…
The variable range hopping (VRH) model has been widely applied to describe electrical transport in disordered systems, providing theoretical formulas to fit temperature-dependent electric conductivity. These models rely on oversimplified…
For a system of localised electron states the DC conductivity vanishes at zero temperature, but localised electrons can conduct at finite temperature. Mott gave a theory for the low-temperature conductivity in terms of a variable-range…
We analize electrical conductivity controlled by hopping of bound spin polarons in disordered solids with wide distributions of electron energies and polaron shifts (barriers). By means of percolation theory and Monte Carlo simulations we…
For the low-temperature electrical conductance of a disordered {\it quantum insulator} in $d$-dimensions, Mott \cite{mott} had proposed his Variable Range Hopping (VRH) formula, $G(T) = G_0 {\rm exp}[-(T_0/T)^{\gamma}]$, where $G_0$ is a…
We study the variable-range hopping (VRH) of bosons in an array of sites with short-range interactions and a large characteristic coordination number. The latter leads to strong quantum interference phenomena yet allows for their analytical…
The Miller-Abrahams (MA) random resistor network is given by a complete graph on a marked simple point process with edge conductivities depending on the marks and decaying exponentially in the edge length. As Mott random walk, it is an…
On the basis of the Kubo-Luttinger linear response theory combined with the scaling theory of Anderson localization predicting the energy dependence of localization length near the mobility edge, we have studied the thermoelectric response…
A semi-phenomenological theory of variable-range hopping (VRH) is developed for two-dimensional (2D) quasi-one-dimensional (quasi-1D) systems such as arrays of quantum wires in the Wigner crystal regime. The theory follows the phenomenology…
The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction…
Transport in disordered systems often occurs via the variable range hopping (VRH) in the dilute carrier density limit, where electrons hop between randomly distributed localized levels. We study the nonequilibrium transport by a uniform DC…
We have fabricated oxygen deficient polycrystalline ZnO films by the rf sputtering deposition method. To systematically investigate the charge transport mechanisms in these samples, the electrical resistivities have been measured over a…
Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not…
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…
We investigate the effect of coupling Anderson localized particles in one dimension to a system of marginally localized phonons having a symmetry protected delocalized mode at zero frequency. This situation is naturally realized for…