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Related papers: Threshold Voltage Control in Dual-Gate Organic Ele…

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In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…

Materials Science · Physics 2021-09-24 Shib Sankar Das , Barun Majumder , Ankush Ghosh

We address the problem of controlling the reactive power setpoints of a set of distributed energy resources (DERs) in a power distribution network so as to mitigate the impact of variability in uncontrolled power injections associated with,…

Optimization and Control · Mathematics 2023-03-16 Alejandro D. Dominguez-Garcia , Madi Zholbaryssov , Temitope Amuda , Olaoluwapo Ajala

This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a…

Systems and Control · Electrical Eng. & Systems 2024-05-14 M. M. Al Chawa , R. Tetzlaff , D. Bedau , J. W. Reiner , D. A. Stewart , M. K. Grobis

A new type of disorder-driven electronic percolation transition is found for two-dimensional electron gas (2DEG), based on a quantum cellular automaton model. This transition is shown to be accompanied with a metal-insulator transition, as…

Statistical Mechanics · Physics 2018-10-17 M. N. Najafi

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift…

Materials Science · Physics 2009-07-14 I. Gutiérrez Lezama , A. F. Morpurgo

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect…

Materials Science · Physics 2015-05-18 E. G. Bittle , J. W. Brill , J. E. Anthony

The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moir\'e superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band…

Strongly Correlated Electrons · Physics 2022-01-27 Yoshitaka Kawasugi , Hiroshi M. Yamamoto

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

Mesoscale and Nanoscale Physics · Physics 2007-08-01 Vincent I. Conrad , Andrew D. Greentree , Lloyd C. L. Hollenberg

We study the differences in electrical charge transport dynamics of the conductivity enhancement of poly(3,4-ethylenedioxythiophene) (PEDOT) derivatives under geometrical confinement. The results of polymer blend poly(3,4-ethylene…

Materials Science · Physics 2022-03-04 Sukanya Das , Anil Kumar , K. S. Narayan

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

Applied Physics · Physics 2021-02-03 Jake Scoggin , Helena Silva , Ali Gokirmak

We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in…

Mesoscale and Nanoscale Physics · Physics 2012-11-19 A. Ganczarczyk , S. Rojek , A. Quindeau , M. Geller , A. Hucht , C. Notthoff , D. Reuter , A. D. Wieck , J. König , A. Lorke

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semiconductor (AOS) channel and the high-k gate dielectric. SiL…

An electrode contact-related mechanism for the operational instability of organic electronic devices is proposed and confirmed via observation of a water-induced change in charge-injection barrier eights at the…

Applied Physics · Physics 2020-01-28 Ryo Nouchi

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

Instrumentation and Detectors · Physics 2014-10-10 Ran Wang , Yating Zhang , Haiyang Wang , Xiaoxian Song , Lufan Jin , Haitao Dai , Sen Wu , Jianquan Yao

We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…

Thresholded hybrid systems are restricted dynamical systems, where the current mode, and hence the ODE system describing its behavior, is solely determined by externally supplied digital input signals and where the only output signals are…

Systems and Control · Electrical Eng. & Systems 2024-03-08 Arman Ferdowsi , Matthias Függer , Thomas Nowak , Michael Drmota , Ulrich Schmid

We have performed resistivity measurements of poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] (PEDOT:PSS) films with varying concentrations of glycerol. Resistivity is seen to decrease exponentially from roughly 3 ohm-cm for pure…

Materials Science · Physics 2014-08-29 Emma Lewis , Bhaskar Mantha , Richard P. Barber

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing…

Applied Physics · Physics 2020-09-16 Andrea Perinot , Michele Giorgio , Virgilio Mattoli , Dario Natali , Mario Caironi

High-temperature solid oxide electrolysis cells (SOECs) are a potential core power-to-X (P2X) technology due to their unparalleled system efficiencies, that can exceed 85 % when excess heat from exothermic downstream processes is available.…

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