Related papers: Interfacial magnetic anisotropy controlled spin pu…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate…
A topological modulation of magnetic thin films can induce a magnetic anisotropy of magnetostatic origin. In this letter, we report on the magnetic properties of NiFe layers deposited on wavy shaped Si substrates. Without any modulation,…
By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the…
Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
A recent theory by Chen and Zhang [Phys. Rev. Lett. 114, 126602 (2015)] predicts strongly anisotropic damping due to interfacial spin-orbit coupling in ultrathin magnetic films. Interfacial Gilbert-type relaxation, due to the spin pumping…
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ),…
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
We present a novel method for measuring the modulation of magnetic anisotropy and the strength of spin-orbit interaction by an electrical current in nanomagnets. Our systematic study explores the current dependencies of these properties…
Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in…
We examine the atomic intermixing phenomenon in three distinct amorphous CoB-based multilayer thin film platforms - Pt/CoB/Ir, Ir/CoB/Pt and Pt/CoB/MgO - which are shown to stabilise room-temperature chiral magnetic textures. Intermixing…
Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…
To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global…
A family of ferrimagnets (CoV2O4, GdCo, TbCo) exhibits out-of-plane magnetic anisotropy when strained compressively and in-plane magnetic anisotropy when strained expansively (or vice versa). If such a ferrimagnetic thin film is placed on…
Perpendicular magnetic anisotropy was found to be highly sensitive to the nominal thickness and morphology of laterally heterogeneous CoPd films in the vicinity of the metal insulator transition. We used the effect to tune the anisotropy by…
CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a…