Related papers: Atomically Thin Metal-Dielectric Heterostructures …
Recently, van der Waals heterostructure has attracted interest both theoretically and experimentally for their potential applications in photoelectronic devices, photovoltaic devices, plasmonic devices and photocatalysis. Inspired by this,…
Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we…
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for…
Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a…
We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good…
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic…
We report on a systematic study of a number of structurally identical but chemically distinct transition metal oxides in order to determine how the material-specific properties such as the composition and the strain affect the properties at…
The 133.5 nm lines are important observables for the NASA/SMEX mission Interface Region Imaging Spectrograph (IRIS). To make 3D non-LTE radiative transfer computationally feasible it is crucial to have a model atom with as few levels as…
The temperature dependence of the electrical resistivity of the heterostructures consisting of single crystalline LaMnO$_3$ samples with different crystallographic orientations covered by the epitaxial ferroelectric…
The future success of integrated circuits (IC) technology relies on the continuing miniaturization of the feature size, allowing more components per chip and higher speed. Extreme anisotropy opens new opportunities for spatial pattern…
There is great interest in the study of topological insulator-based heterostructures due to expected emerging phenomena. However, a challenge of topological insulator (TI) research is the contribution of the bulk conduction to the TI…
In this study structural and mechanical properties of a 1 um thick Al2O3 coating, deposited on 316L stainless steel by Pulsed Laser Deposition (PLD), subjected to high energy ion irradiation were assessed. Mechanical properties of pristine…
The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate…
Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present…
Films of Bi$\rm _2$Sr$\rm _2$CaCu$\rm _2$O$\rm _8$ and Bi$\rm _2$Sr$\rm _2$CuO$\rm _6$ have been grown using Atomic-Layer-by-Layer Molecular Beam Epitaxy (ALL-MBE) on lattice-matched substrates. These materials have been combined with…
We illustrate ion-beam engineering of MoO3 Ag Au multilayer plasmonic substrates to improve SERS performance, We illustrate ion-beam engineering of MoO3-Ag-Au multilayer plasmonic substrates to improve SERS performance. Orthorhombic…
The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen…
Freestanding oxide films offer significant potential for integrating exotic quantum functionalities with semiconductor technologies. However, their performance is critically limited by surface roughness and interfacial imperfection caused…
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity.…
Using scanning tunnel microscopy (STM), we investigate the superconductivity and vortex properties in topological insulator Bi$_{2}$Te$_{3}$ thin films grown on the iron-based superconductor FeTe$_{0.55}$Se$_{0.45}$. The proximity-induced…