Related papers: Non-uniform Superlattice Magnetic Tunnel Junctions
Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable…
This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
Hexagonal boron nitride ($h$-BN), with its strong in-plane bonding and good lattice match to hcp and fcc metals, offers a promising alternative barrier material for magnetic tunnel junctions (MTJs). Here, we investigate spin-dependent…
Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermagnetic tunnel junctions (AMTJs), the suppression of tunneling…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
We investigate the suitability of nearly half-metallic ferrimagnetic quaternary Heusler alloys, CoCrMnZ (Z=Al, Ga, Si, Ge) to assess the feasibility as electrode materials of MgO-based magnetic tunnel junctions (MTJ). Low magnetic moments…
Spin torque nano-oscillators (STNOs) hold encouraging promise for nanoscale microwave generators, modulators, and new types of intelligent computing. The nonlinearity, describing the current-induced tunability of oscillating frequency, is a…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier…
The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of…