Related papers: N\'eel Spin Currents in Antiferromagnets
One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. \v{Z}elezn\'y et al., PRL 113, 157201…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
We study theoretically the thermodynamic properties and spin dynamics of a class of magnetic rings closely related to ferric wheels, antiferromagnetic ring systems, in which one of the Fe (III) ions has been replaced by a dopant ion to…
We have measured the tunnelling current in Nb/Nb$_x$O$_y$/Ni planar tunnel junctions at different temperatures. The junctions are in the intermediate transparency regime. We have extracted the current polarization of the metal/ferromagnet…
We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a…
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1)…
Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…
The recent proposal of altermagnetism has drawn widespread attention to antiferromagnet (AFM) exhibiting spin splitting, extending beyond the realm of sign-alternating spin splitting in momentum space protected solely by rotational…
Spin current generation through non-relativistic spin splittings, found in uncompensated magnets and d-wave altermagnets, is desirable for low-power spintronics. Such spin currents, however, are symmetry forbidden in conventional collinear…
Controlling spin current lies at the heart of spintronics and its applications. The sign of spin currents is monotonous in ferromagnets once the current direction is determined. Spin currents in antiferromagnets can possess opposite…
Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermagnetic tunnel junctions (AMTJs), the suppression of tunneling…
We consider an antiferromagnetic insulator that is in contact with a metal. Spin accumulation in the metal can induce spin-transfer torques on the staggered field and on the magnetization in the antiferromagnet. These torques relate to spin…
The spin-phase interference effects are studied analytically in resonant quantum tunneling of the N\'{e}el vector between degenerate excited levels in nanometer-scale single-domain antiferromagnets in the absence of an external magnetic…
Phenomenological approach is developed in the theory of spin-valve type ferromagnetic junctions to describe exchange switching by current flowing perpendicular to interfaces. Forward and backward current switching effects are described and…
We predict ultrafast switching in a chiral anti-ferromagnet that occurs at femtosecond times, nearly 5 orders of magnitude faster than the torque induced nanosecond switching previously observed. The physical mechanism, quite different from…
It is shown that the current-induced torques between a ferromagnetic layer and an antiferromagnetic layer with a compensated interface vanish when the ferromagnet is aligned with an axis of spin-rotation symmetry of the antiferromagnet. For…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…
A vital goal in spintronics is the efficient electrical generation of spin currents, a pursuit that has recently focused on using antiferromagnets (AFMs) as spin current sources. It has been demonstrated that antiferromagnets with broken PT…
A system exhibiting multiple simultaneously broken symmetries offers the opportunity to influence physical phenomena such as tunneling currents by means of external control parameters. Time-reversal symmetry and inversion symmetry are both…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…