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Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to…
The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling…
The charge collection properties in different particle sensor materials with respect to the shape of the generated signals, the electric field within the detector, the charge carrier mobility and the carrier lifetime are studied with the…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
We discuss how two-photon absorption (TPA) of squeezed and coherent states of light can be detected in measurements of the transmitted light fields. Such measurements typically suffer from competing loss mechanisms such as experimental…
First measurements are presented from a newly commissioned two-photon absorption (TPA) setup at Nikhef. The characterisation of the various components of the system is discussed. Two planar silicon sensors, one being electron collecting and…
Entangled two-photon absorption spectroscopy (TPA) has been widely recognized as a powerful tool for revealing relevant information about the structure of complex molecular systems. However, to date, the experimental implementation of this…
We experimentally demonstrate two-photon absorption (TPA) with broadband down-converted light (squeezed vacuum). Although incoherent and exhibiting the statistics of a thermal noise, broadband down-converted light can induce TPA with the…
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…
Non-degenerate two-photon absorption (TPA) is investigated in a nanophotonic silicon waveguide in a configuration such that the dispersion of the nonlinear absorption and refraction cannot be neglected. It is shown that a signal wave can…
Two-photon absorption (TPA) enables three-dimensional characterisation of silicon detectors by generating charge carriers within a confined volume around a focused laser spot. In combination with pixelated readout systems, TPA measurements…
We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled…
Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…
Magnetic- and electric-dipole two-photon absorption (MED-TPA), recently introduced as a new spectroscopic technique for studying transitions between states of opposite parities, is investigated from a theoretical point of view. A new…
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities…
We have developed a transient thermoreflectance technique using picosecond pulsed and cw laser to study thermal conductivity and interface conductance in both thin-films and bulk materials. A real time-resolved system observes a thermal…
Transient absorption (TA) is the most widespread method to follow ultrafast dynamics in molecules and materials. The related method of TA anisotropy (TAA) reports on the ultrafast reorientation dynamics of transition dipole moments,…
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously…
Recording of transient absorption microscopy images requires fast detection of minute optical density changes, which is typically achieved with high-repetition-rate laser sources and lock-in detection. Here, we present a highly flexible and…