Related papers: Trap-Assisted Auger-Meitner Recombination from Fir…
Non-Hermitian photonics based on combining loss and gain media within a single optical system provides a number of approaches to control and generate the flow of light. In this paper, we show that by introducing non-Hermitian perturbation…
The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to…
Nonradiative carrier recombination is of both great applied and fundamental importance.But the correct ab initio approaches to calculate it remains to be inconclusive. Here we used 5 different formalisms to calculate the nonradiative…
Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
Learning a generalized prior for natural image restoration is an important yet challenging task. Early methods mostly involved handcrafted priors including normalized sparsity, l_0 gradients, dark channel priors, etc. Recently, deep neural…
We present detailed theoretical and experimental studies of Auger recombination in narrow-gap mercury cadmium telluride quantum wells (HgCdTe QWs). We calculate the Auger recombination probabilities as functions of non-equilibrium carrier…
Intermediate band photovoltaics hold the promise of being highly efficient and cost effective photovoltaic cells. Intermediate states in the band gap, however, are known to facilitate nonradiative recombination. Much effort has been…
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation…
Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the…
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy…
Image restoration under adverse weather conditions has been extensively explored, leading to numerous high-performance methods. In particular, recent advances in All-in-One approaches have shown impressive results by training on multi-task…
The quasiparticle recombination time in superconducting films, consisting of the standard electron-phonon interaction and a yet to be identified low temperature process, is studied for different densities of magnetic and nonmagnetic atoms.…
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy…
Photomultiplication-type organic photodetectors (PM-OPDs) promise exceptional sensitivity for weak-light detection but typically suffer from a gain-bandwidth trade-off where high external quantum efficiency (EQE) incurs large dark current…
Trapped-ion systems are a promising route toward the realization of both near-term and universal quantum computers. However, one of the pressing challenges is improving the fidelity of two-qubit entangling gates. These operations are often…
Magneto-Optical Traps have been used for several decades. Among fundamental mechanisms occuring in such traps, the magnitude of the multiple scattering is still unclear. Indeed, many experimental situations cannot be modeled easily,…
We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium…
Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…