Related papers: Cascadable in-memory computing based on symmetric …
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Nanoelectronic devices that mimic the functionality of synapses are a crucial requirement for performing cortical simulations of the brain. In this work we propose a ferromagnet-heavy metal heterostructure that employs spin-orbit torque to…
The demand for computing power has been growing exponentially with the rise of artificial intelligence (AI), machine learning, and the Internet of Things (IoT). This growth requires unconventional computing primitives that prioritize energy…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…
Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, thereby it is highly desirable to develop new material…
Arrays of coupled nanomagnets have wide-ranging fundamental and practical applications in artificial spin ices, neuromorphic computing and spintronics. However, lacking in these fields are nanomagnets with perpendicular magnetic anisotropy…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Recent progresses in magnetoionics offer exciting potentials to leverage its non-linearity, short-term memory, and energy-efficiency to uniquely advance the field of physical reservoir computing. In this work, we experimentally demonstrate…
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy…