Related papers: Monolithic TCAD Simulation of Phase-Change Memory …
Constant bit-size Transformers are known to be Turing complete, but existing constructions require $\Omega(s(n))$ chain-of-thought (CoT) steps per simulated Turing machine (TM) step, leading to impractical reasoning lengths. In this paper,…
Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…
We propose advancing photonic in-memory computing through three-dimensional photonic-electronic integrated circuits using phase-change materials (PCM) and AlGaAs-CMOS technology. These circuits offer high precision (greater than 12 bits),…
An analysis of thermal transients from non-equilibrium ab initio molecular-dynamics simulations can be used to calculate the thermal conductivity of materials with a short phonon mean-free path. We adapt the approach-to-equilibrium…
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and…
Microelectromechanical systems (MEMS) technologies are developing rapidly with increasing study of the design, fabrication and commercialization of microscale systems and devices. Accurate knowledge on the mechanical behaviors of thin film…
Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime…
In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…
The relentless pursuit of miniaturization and performance enhancement in electronic devices has led to a fundamental challenge in the field of circuit design and simulation: how to accurately account for the inherent stochastic nature of…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
Hybrid memory systems, comprised of emerging non-volatile memory (NVM) and DRAM, have been proposed to address the growing memory demand of applications. Emerging NVM technologies, such as phase-change memories (PCM), memristor, and 3D…
The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication…
Emerging non-volatile memories (NVMs) represent a disruptive technology that allows a paradigm shift from the conventional von Neumann architecture towards more efficient computing-in-memory (CIM) architectures. Several instrumentation…
Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…
Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is…
We developed a machine learning interatomic potential (MLIP) for Ge-rich GeSbTe alloys of interest for applications in phase change memories embedded in microcontrollers. The MLIP was generated by fitting with a neural network method a…
Chalcogenide phase-change materials (PCMs) are important for nonvolatile memory and reconfigurable photonic technologies. The GeTe-Sb2Te3 mixture system, commonly referred to as GST, is the most well-known PCM family, but new PCMs are…
Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally…
This work expands on our recently introduced low Mach enthalpy method [1] for simulating the melting and solidification of a phase change material (PCM) alongside (or without) an ambient gas phase. The method captures PCM's volume change…
We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer…