Related papers: Nonvolatile Electrochemical Random-Access Memory U…
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…
Non-Volatile Memories (NVMs) such as Resistive RAM (RRAM) are used in neuromorphic systems to implement high-density and low-power analog synaptic weights. Unfortunately, an RRAM cell can switch its state after reading its content a certain…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error-correcting code (ECC) post processing circuit is presented. ECC post processing increases the quality of randomness by…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
We introduce \emph{Adaptive RAG Memory} (ARM), a retrieval-augmented generation (RAG) framework that replaces a static vector index with a \emph{dynamic} memory substrate governed by selective remembrance and decay. Frequently retrieved…
In this work, we first analyze the memory behavior in three recurrent neural networks (RNN) cells; namely, the simple RNN (SRN), the long short-term memory (LSTM) and the gated recurrent unit (GRU), where the memory is defined as a function…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power…
SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…
Understanding the intricate operations of Recurrent Neural Networks (RNNs) mechanistically is pivotal for advancing their capabilities and applications. In this pursuit, we propose the Episodic Memory Theory (EMT), illustrating that RNNs…
In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…
Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but…
Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
Quantum random-access memory (QRAM) is a mechanism to access data (quantum or classical) based on addresses which are themselves a quantum state. QRAM has a long and controversial history, and here we survey and expand arguments and…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we…