Related papers: Metal-insulator transition in a 2D system of chira…
Field-theoretical approach to Anderson localization in 2D disordered fermionic systems of chiral symmetry classes (BDI, AIII, CII) is developed. Important representatives of these symmetry classes are random hopping models on bipartite…
We study the three-dimensional Anderson model of localization with anisotropic hopping, i.e., weakly coupled chains and weakly coupled planes. In our extensive numerical study we identify and characterize the metal-insulator transition by…
The multifractality of the critical eigenstate at the metal to insulator transition (MIT) in the three-dimensional Anderson model of localization is characterized by its associated singularity spectrum f(alpha). Recent works in 1D and 2D…
The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…
We study the metal-insulator transition (MIT) in weakly coupled disordered planes on the basis of a Non-Linear Sigma Model (NL$\sigma $M). Using two different methods, a renormalization group (RG) approach and an auxiliary field method, we…
We discuss a recent mapping of the Anderson-Mott metal-insulator transition onto a random field magnet problem. The most important new idea introduced is to describe the metal-insulator transition in terms of an order parameter expansion…
By applying a multi-stage real-space renormalization group procedure to Hubbard model, we examine the finite-size scaling in Mott metal-insulator transition(MIT) on a non-partite lattice. It is found that there exists a critic point…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…
We study analytically the metal-insulator transition in a disordered conductor by combining the self-consistent theory of localization with the one parameter scaling theory. We provide explicit expressions of the critical exponents and the…
We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…
We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator…
We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…
From transfer-matrix calculation of localization lengths and their finite-size scaling analyses, we evaluate critical exponents of the Anderson metal-insulator transition in three dimensional (3D) orthogonal class with particle-hole…
We investigate a disordered two-dimensional lattice model for noninteracting electrons with long-range power-law transfer terms and apply the method of level statistics for the calculation of the critical properties. The eigenvalues used…
The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…
We examine the localization properties of the Anderson Hamiltonian with additional off-diagonal disorder using the transfer-matrix method and finite-size scaling. We compute the localization lengths and study the metal-insulator transition…
According to the scaling theory of localization, all quantum electronic states are localized in two-dimensional (2D) systems. One consequence of the theory is that there is no quantum percolation transition in 2D. However, in a real system…
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…
Using a three-frequency one-dimensional kicked rotor experimentally realized with a cold atomic gas, we study the transport properties at the critical point of the metal-insulator Anderson transition. We accurately measure the…