Related papers: Quantum spin Hall phase in GeSn heterostructures o…
Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V or IV semiconductors as a large class of new materials…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…
The helical edge states in a quantum spin Hall insulator are presumably protected by time- reversal symmetry. However, even in the presence of magnetic field which breaks time-reversal symmetry, the helical edge conduction can still exist,…
Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the…
Topological quantum phase transition in electron gas systems is an enthralling phenomena. This phase transition has a unique property in that it is associated with a quantum phase transition point, which separates different regions with…
The physics of interacting integer-spin chains has been a topic of intense theoretical interest, particularly in the context of symmetry-protected topological phases. However, there has not been a controllable model system to study this…
Combining tight-binding models and first principles calculations, we investigate the quantum anomalous Hall (QAH) effect induced by intrinsic spin-orbit coupling (SOC) in buckled honeycomb lattice with sp orbitals in an external exchange…
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers. Unlike the HgTe/CdTe QWs, the inverted band gap in InAs/GaSb QW bilayers does not…
We study the different response to an impurity of the two topologically different phases shown by a two dimensional insulator with time reversal symmetry, namely, the Quantum Spin Hall and the normal phase. We consider the case of graphene…
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require…
We extend the coupled-wire construction of quantum Hall phases, and search for fractional topological insulating states in models of weakly coupled wires at zero external magnetic field. Focussing on systems beyond double copies of…
We demonstrate theoretically that interface engineering can drive Germanium, one of the most commonly-used semiconductors, into topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
Quantum spin Hall (QSH) insulators are a topologically protected phase of matter in two dimensions that can support non-dissipative spin transport. A hallmark of the phase is a pair of helical edge states surrounding an insulating bulk. A…
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is…
Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV)…
Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from…
Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…
In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to…