Related papers: Quantum capacitance of a superconducting subgap st…
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the…
Hybrid quantum dot-oscillator systems have become attractive platforms to inspect quantum coherence effects at the nanoscale. Here, we investigate a Cooper-pair splitter setup consisting of two quantum dots, each linearly coupled to a local…
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular,…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the…
The Kondo effect emerges when a localized spin is screened by conduction electrons, giving rise to a strongly-correlated many-body ground state. In this work, we investigate this phenomenon in a GaAs/AlGaAs quantum dot, focusing on the…
We address the measurement of density of states within and beyond the superconducting gap in tunnel-coupled finite-size nanostructures using a capacitive method. Third-harmonic generation is used to yield the full differential conductance…
We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite…
Ferromagnetic proximity effect is studied in InAs nanowire (NW) based quantum dots (QD) strongly coupled to a ferromagnetic (F) and a superconducting (S) lead. The influence of the F lead is detected through the splitting of the spin-1/2…
We investigate the measurements of two-state quantum systems (qubits) at finite temperatures using a resonant harmonic oscillator as a quantum probe. The reduced density matrix and oscillator correlators are calculated by a scheme combining…
We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…
The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like the spin-orbit coupling and…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
The angular momentum or vorticity of Cooper pairs is shown to affect strongly the charge transfer through a small superconducting (S) island of a single electron transistor. This interplay of charge and rotational degrees of freedom in a…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
We show that quantum confinement in the valence and conduction bands of semiconducting single-walled carbon nanotubes can be engineered by means of artificial defects. This ability holds potential for designing future nanotube-based quantum…
In this PhD thesis, quantum devices based on molecular-beam epitaxy grown InAs semiconductor with an in-situ grown epitaxial Al film were investigated. Novel device geometries were realized that allow for the study of bound states that…
We report the observation of two fundamental sub-gap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact.…