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Related papers: Quantum effects in two-dimensional silicon carbide

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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of…

Two-dimensional (2D) materials that exhibit charge density waves (CDWs) have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs…

Two-dimensional (2D) materials are strongly affected by the dielectric environment including substrates, making it an important factor in designing materials for quantum and electronic technologies. Yet, first-principles evaluation of…

Materials Science · Physics 2019-08-29 Dan Wang , Ravishankar Sundararaman

In this paper we present NANOTCAD2D, a code for the simulation of the electrical properties of semiconductor-based nanoelectronic devices and structures in two-dimensional domains. Such code is based on the solution of the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 G. Curatola , G. Iannaccone

Silicon carbide (SiC) is an important technological material, but its high-temperature phase diagram has remained unclear due to conflicting experimental results about congruent versus incongruent melting. Here, we employ large-scale…

Materials Science · Physics 2025-10-30 Yu Xie , Menghang Wang , Senja Ramakers , Frans Spaepen , Boris Kozinsky

Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…

Materials Science · Physics 2009-07-31 Carlos P. Herrero , Rafael Ramirez

Understanding the interatomic bonding and electronic properties of two-dimensional (2D) materials is crucial for preparing high-performance 2D semiconductor materials. We have calculated the band structure, electronic properties, and…

Materials Science · Physics 2025-01-14 Yu Wang , Yunhu Zhu , Yixin Li , Maolin Bo

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…

In quantum/classical (QM/CM) partitioning methods for multi-scale modeling, one is often forced to introduce uncontrolled phenomenological effects of the environment (CM) in the quantum (QM) domain as ab initio quantum calculations are…

Chemical Physics · Physics 2007-05-23 Aditi Mallik , Carlos E. Taylor , Keith Runge , James W. Dufty

To take into account nuclear quantum effects on the dynamics of atoms, the path integral molecular dynamics (PIMD) method used since 1980s is based on the formalism developed by R. P. Feynman. However, the huge computation time required for…

Computational Physics · Physics 2019-05-08 H. Dammak , M. Hayoun , F Brieuc , G. Geneste

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological…

Materials Science · Physics 2014-07-29 H. Kraus , V. A. Soltamov , F. Fuchs , D. Simin , A. Sperlich , P. G. Baranov , G. V. Astakhov , V. Dyakonov

Silicene, a two-dimensional (2D) allotrope of silicon, has attracted significant interest for its electronic and mechanical properties, alongside its compatibility with various substrates. In this study, we investigate the structural and…

Materials Science · Physics 2025-05-14 Carlos P. Herrero , Rafael Ramirez

We consider quantum rings realized in materials where the dynamics of charge carriers mimics that of two-dimensional (2D) Dirac electrons. A general theoretical description of the ring-subband structure is developed that applies to a range…

Mesoscale and Nanoscale Physics · Physics 2018-05-17 L. Gioia , U. Zülicke , M. Governale , R. Winkler

Neutral silicon-carbon divacancy (V$_{Si}$V$_{C}$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline centers. Within the theoretical framework of spin-polarized…

Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…

Quantum Physics · Physics 2020-05-05 Z. Shang , A. Hashemi , Y. Berencén , H. -P. Komsa , P. Erhart , A. V. Krasheninnikov , G. V. Astakhov

We describe both the Fermi velocity and the mass renormalization due to the two-dimensional Coulomb interaction in the presence of a thermal bath. To achieve this, we consider an anisotropic version of pseudo quantum electrodynamics (PQED),…

Mesoscale and Nanoscale Physics · Physics 2023-09-19 Nilberto Bezerra , Van Sérgio Alves , Leandro O. Nascimento , Luis Fernandez

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the…

Mesoscale and Nanoscale Physics · Physics 2015-12-08 Gui-Bin Liu , Di Xiao , Yugui Yao , Xiaodong Xu , Wang Yao

The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different…

Materials Science · Physics 2020-04-15 Dong Fan , Shaohua Lu , Yundong Guo , Xiaojun Hu

Diamond is studied by path integral molecular dynamics simulations of the atomic nuclei in combination with a tight-binding Hamiltonian to describe its electronic structure and total energy. This approach allows us to quantify the influence…

Materials Science · Physics 2009-11-11 Rafael Ramirez , Carlos P. Herrero , Eduardo R. Hernandez

We study analytically the evolution of superconductivity in clean quasi-two-dimensional multiband supercon- ductors as the film thickness enters the nanoscale region by mean-field and semiclassical techniques. Tunneling into the substrate…

Mesoscale and Nanoscale Physics · Physics 2016-01-15 Aurelio Romero-Bermúdez , Antonio M. García-García