Related papers: Effect of Substrate Surface on the Wide Bandgap Sn…
Highly conducting $SnO_{2}$ thin films were prepared by chemical spray pyrolysis technique. One set of as-deposited films were annealed in air for 2 h at 850$^{o}$C. These as-deposited and annealed films were irradiated using $Au^{9+}$ ions…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…
Among the wide bandgap semiconductors, TiO$_{2}$ is the highly stable and cost-efficient semiconductor used for the different photocatalysis processes like water splitting, chemical waste degradation, anti-micro bacterial activities, and…
Many investigations and reviews show that II-VI compound semiconductor 1-D nanostructures have a great potential for the future electronic and optoelectronic applications. As an important II-VI semiconductor, ZnSe is one of the most…
Sol-gel spin coating technique was employed to synthesize CuO thin films at 1500 rpm, 2200 rpm and 2400 rpm for 30 seconds, and subsequently annealed at 150-550{\deg}C for 1 hour. Multi-layered CuO thin films with 3 and 5 layers were…
Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 {\deg}C for 1 hr. The XRD measurements…
We have investigated the atomically-resolved substrate and homoepitaxial thin film surfaces of SrTiO3(001) using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) combined with pulsed laser deposition (PLD). It was found…
Zinc telluride (ZnTe) thin films have special semiconducting characteristics that make them very promising for a broad range of optoelectronic applications. In this work, a novel approach for synthesizing ZnTe thin films by spin coating…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…
This investigation deals with the effect of annealing temperature on the structural, topographical and optical properties of Zinc Oxide thin films prepared by sol gel method. The structural properties were studied using X-ray diffraction…
The structural, optical and electrical properties of spray deposited antimony (Sb) doped tin oxide (SnO2) thin films, prepared from SnCl4 precursor, have been studied as a function of antimony doping concentration. The doping concentration…
Hf silicate films (HfO_2)_{0.25}(SiO_2)_{0.75} with thicknesses in the range 4-20 nm were grown on silicon substrate by atomic layer deposition at 350 deg.C.The Hf distributions in as-grown and 800 deg.C annealed films were investigated by…
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
A comparative study of the physical properties of undoped Zinc Oxide (ZnO) and Al doped Zinc Oxide (AZO) thin films were performed as a function of annealing temperature. The structural properties were analyzed using X-ray diffraction and…
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films…
In present study, Tetragonal Mn$_3$O$_4$ thin films of different coating layers of 2, 4, 6, 8, and 10 were prepared on the microscopic glass slides by the spin-coating method. X-ray diffraction, Raman spectroscopy, and ultra-violet visible…
Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and…
Zinc oxide (ZnO) films having various thicknesses were synthesized on sapphire substrates by thermal oxidation of Zn-metallic films in air ambient. X-ray diffraction (XRD) spectra indicate that the resulting films possess a polycrystalline…