Related papers: Ferroelectric Domain Wall Logic Gates
Spin-polarized low-energy electron microscopy was used to image a magnetite crystal with (100) surface orientation. Sets of spin-dependent images of magnetic domain patterns observed in this surface were used to map the direction of the…
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…
We propose a highly efficient thermoelectric diode device built from the coupling of a quantum dot with a normal or ferromagnetic electrode and a superconducting reservoir. The current shows a strongly nonlinear behavior in the forward…
Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under…
An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion…
Scattering of spin-up and spin-down electrons while passing through a ferromagnetic domain wall leads to an additional resistance for transport current, usually observed prominently in constricted magnetic structures. In this report, we use…
Experimental observations suggest that nominally uncharged, as-grown domain walls in ferroelectric thin films can be conductive, yet comprehensive theoretical models to explain this behavior are lacking. Here, Landau theory is used to…
Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the…
We study from first-principles the structural and electronic properties of head-to-head (HH) and tail-to-tail (TT) 180$^\circ$ domain walls in isolated free-standing PbTiO$_{3}$ slabs. For sufficiently thick domains ($n$ = 16 unit cells of…
We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a…
First-principles calculations for pristine neutral ferroelectric domain walls in BiFeO$_3$ reveal that excess electrons are selectively trapped by the domain walls, while holes are only weakly attracted. Such trapped excess electrons may be…
The formation of 360{\deg} magnetic domain walls (360DWs) in Co and Ni80Fe20 thin film wires was demonstrated experimentally for different wire widths, by successively injecting two 180{\deg} domain walls (180DWs) into the wire. For narrow…
Honeycomb Na$_2$IrO$_3$ is a prototype spin-orbit Mott insulator and Kitaev magnet. We report a combined structural and electrical resistivity study of Na$_2$IrO$_3$ single crystals. Laue back-scattering diffraction indicates twinning with…
A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…
In this contribution we investigate the impact of lateral leakage for linear and nonlinear optical waveguides in lithium niobate on insulator (LNOI). Silicon nitride (SiN) loaded and direct patterned lithium niobate cross-sections are…
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density,…
Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a…
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…
Spin-orbit torque provides a powerful means of manipulating domain walls along magnetic wires. However, the current density required for domain wall motion is still too high to realize low power devices. Here we experimentally demonstrate…