Related papers: Conductivity and size quantization effects in semi…
We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…
We present calculations of the tunneling density of states in an anisotropically paired superconductor for two different sample geometries: a semi-infinite system with a single specular wall, and a slab of finite thickness and infinite…
By means of computer simulation, we examined effect of dispersity of filler length on electrical conductivity of two-dimensional (2D) composites with rod-like fillers. Continuous approach has been used. Highly conductive zero-width rod-like…
We use an efficient projection scheme for the Fock operator to analyze the size dependence of silicon quantum dots (QDs) electronic properties. We compare the behavior of hybrid, screened hybrid and local density functionals as a function…
We analyze the fractional quantization of the ballistic conductance associated with the light and heavy holes bands in Si, Ge and GaAs systems. It is shown that the formation of the localized hole state in the region of the quantum point…
We investigate the zero-temperature transport of electrons in a model of quantum dot arrays with a disordered background potential. One effect of the disorder is that conduction through the array is possible only for voltages across the…
We study the transport through a quantum dot, in the Kondo Coulomb blockade valley, embedded in a mesoscopic device with finite wires. The quantization of states in the circuit that hosts the quantum dot gives rise to finite size effects.…
We investigate theoretically the linear and nonlinear conductance through a nanostructure with two-fold degenerate single levels, corresponding to the transport through nanostructures such as a carbon nanotube, or double dot systems with…
The electrical transport properties of atomic-scale conductors are reviewed, with an emphasis on the relations of this problem with studies on quantum size effects in metallic clusters. A brief introduction is given of the natural formalism…
The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured…
We study the size dependence of thermal conductivity in nanoscale semiconducting systems. An analytical formula including the surface scattering and the size confinement effects of phonon transport is derived. The theoretical formula gives…
A strong mutual influence of superconductors (S) and ferromagnetic (F) conductors in hybrid F/S (Ni/Al) nanostructures is observed. The magnitude of a proximity-induced conductance on the F-side is more than two orders larger than that…
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…
By designing a multi-channel millimeter Hall measurement configuration, we realize the carrier-density (locally) controllable measurement on the transport property in 2H MoS$_{2}$. We observe a linearly increased Hall conductivity and…
The quantum theory of conductivity of semiconductor objects, to which the quantum wells, wires and dots concern, is constructed. Average values of current and charge densities, induced by a weak electromagnetic field, are calculated. It is…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
We present measurements of transport through two tunnel-coupled quantum dots of different sizes connected in series in a strong, variable, perpendicular magnetic field. Double dot conductance was measured both as a function of magnetic…
We have performed experiments on single-wall carbon nanotube (SWNT) networks and compared with density-functional theory (DFT) calculations to identify the microscopic origin of the observed sensitivity of the network conductivity to…
We analyze the effect of a gate on the conductance of molecules by separately evaluating the gate-induced polarization and the potential shift of the molecule relative to the leads. The calculations use ab initio density functional theory…
We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…