Related papers: Picosecond Time-Scale Resistive Switching Monitore…
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report…
The advent of advanced neuronal interfaces offers great promise for linking brain functions to electronics. A major bottleneck in achieving this is real-time processing of big data that imposes excessive requirements on bandwidth, energy…
Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the…
All optical switches offer advanced control over the properties of light at ultrafast timescales using optical pulses as both the signal and the control. Limited only by material response times, these switches can operate at terahertz…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Optical circuit switching is connection-oriented, being deterministic through the reservation of a complete wavelength channel or spatial path for a certain period. However, this comes at a trade-off against link dynamics, and overall…
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
The optical memristive switches are electrically activated optical switches that can memorize the current state. They can be used as optical latching switches in which the switching state is changed only by applying an electrical…
Phase transition materials (PTM) have drawn significant attention in recent years due to their abrupt threshold switching characteristics and hysteretic behavior. Augmentation of the PTM with a transistor has been shown to provide enhanced…
Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as…
We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory…
The ability to dynamically steer fs pulses from a monolithically integrated source is a critical milestone for the fields of nanophotonics and ultrafast optics. The nascent field of reconfigurable metasurfaces -- made of optically resonant…
A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…