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Spintronics offers a promising approach to energy efficient neuromorphic computing by integrating the functionalities of synapses and neurons within a single platform. A major challenge, however, is achieving field-free spin orbit torque…

Applied Physics · Physics 2025-10-08 Aijaz H. Lone , Meng Tang , Camelia Florica , Bin He , Jingkai Xu , Xixiang Zhang , Gianluca Setti

An Artificial Neural Network (ANN) inference involves matrix vector multiplications that require a very large number of multiply and accumulate operations, resulting in high energy cost and large device footprint. Stochastic computing (SC)…

Mesoscale and Nanoscale Physics · Physics 2025-08-27 Saadi Sabyasachi , Walid Al Misba , Yixin Shao , Pedram Khalili Amiri , Jayasimha Atulasimha

The computing wall and data movement challenges of deep neural networks (DNNs) have exposed the limitations of conventional CMOS-based DNN accelerators. Furthermore, the deep structure and large model size will make DNNs prohibitive to…

Signal Processing · Electrical Eng. & Systems 2019-12-12 Geng Yuan , Xiaolong Ma , Sheng Lin , Zhengang Li , Caiwen Ding

Floating gate SONOS (Silicon-Oxygen-Nitrogen-Oxygen-Silicon) transistors can be used to train neural networks to ideal accuracies that match those of floating point digital weights on the MNIST dataset when using multiple devices to…

Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…

Deep convolutional artificial neural networks (ANNs) are the leading class of candidate models of the mechanisms of visual processing in the primate ventral stream. While initially inspired by brain anatomy, over the past years, these ANNs…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Mesoscale and Nanoscale Physics · Physics 2016-05-26 Steven Lequeux , Joao Sampaio , Vincent Cros , Kay Yakushiji , Akio Fukushima , Rie Matsumoto , Hitoshi Kubota , Shinji Yuasa , Julie Grollier

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…

Mesoscale and Nanoscale Physics · Physics 2018-08-27 Noriyuki Sato , Fen Xue , Robert M. White , Chong Bi , Shan X. Wang

Biological neural networks do not only include long-term memory and weight multiplication capabilities, as commonly assumed in artificial neural networks, but also more complex functions such as short-term memory, short-term plasticity, and…

Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…

Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…

Machine Learning · Computer Science 2019-04-18 Arman Roohi , Shaahin Angizi , Deliang Fan , Ronald F DeMara

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…

Mesoscale and Nanoscale Physics · Physics 2022-05-31 Tian-Yue Chen , Yu-Chan Hsiao , Wei-Bang Liao , Chi-Feng Pai

We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and…

Disordered Systems and Neural Networks · Physics 2012-08-16 Mrigank Sharad , Charles Augustine , Georgios Panagopoulos , Kaushik Roy

Neuromorphic architectures, which incorporate parallel and in-memory processing, are crucial for accelerating artificial neural network (ANN) computations. This work presents a novel memristor-based multi-layer neural network (memristive…

Emerging Technologies · Computer Science 2025-07-29 Santlal Prajapat , Manobendra Nath Mondal , Susmita Sur-Kolay

We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant computing applications. With the presence of thermal fluctuation,…

Emerging Technologies · Computer Science 2024-03-29 Yu Gu , Puyang Huang , Tianhao Chen , Chenyi Fu , Aitian Chen , Shouzhong Peng , Xixiang Zhang , Xufeng Kou

Spintronic nano-neurons offer a promising route towards energy-efficient, high-performance hardware neural networks thanks to their inherent low-input nonlinear dynamics. However, training such networks remains a major bottleneck as it…

Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and…

We extended the work of proposed activation function, Noisy Softplus, to fit into training of layered up spiking neural networks (SNNs). Thus, any ANN employing Noisy Softplus neurons, even of deep architecture, can be trained simply by the…

Neural and Evolutionary Computing · Computer Science 2017-06-13 Qian Liu , Yunhua Chen , Steve Furber

Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

Emerging Technologies · Computer Science 2024-09-27 Siri Narla , Piyush Kumar , Azad Naeemi