Related papers: Ferro-rotational domain walls revealed by electric…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
Orthoferrites ($RE$FeO$_{3}$) containing rare-earth ($RE$) elements are 3D antiferromagnets (AFM) that exhibit characteristic weak ferromagnetism originating due to slight canting of the spin moments and display a rich variety of spin…
We discuss the emergence of low dimensional ferroelectricity in self-organized Pr0.67Ca0.33MnO3 nanocrystalline arrays deposited on Si substrate. We observe sharp switching of electric polarization under external electric eld with nearly…
The direct domain coupling of spontaneous ferroelectric polarization and net magnetic moment can result in giant magnetoelectric (ME) coupling, which is essential to achieve mutual control and practical applications of multiferroics.…
The evolution of chiral spin structures is studied in ferrimagnet Ta/Ir/Fe/GdFeCo/Pt multilayers as a function of temperature using scanning electron microscopy with polarization analysis (SEMPA). The GdFeCo ferrimagnet exhibits pure…
In most ferromagnets the magnetization rotates from one domain to the next with no preferred handedness. However, broken inversion symmetry can lift the chiral degeneracy, leading to topologically-rich spin textures such as spin-spirals and…
Domain walls in antiferromagnets under a spin-polarized current present dynamical behavior that is not observed in ferromagnets, and it is tunable by the current polarization. Precessional dynamics is obtained for perpendicular spin…
Magnetite has long been investigated across many disciplines due to the interplay between its ferroic order parameters, namely its ferrimagnetism, ferroelasticity and ferroelectricty. Despite this, the experimental difficulty in measuring…
We have measured the contribution of magnetic domain walls (DWs) to the electric resistance in epitaxial manganite films patterned by electron-beam lithography into a track containing a set of notches. We find a DW resistance-area (RA)…
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular…
Perpendicularly magnetized nanowires exhibit distinct domain wall types depending on the geometry. Wide wires contain Bloch walls, narrow wires N\'eel walls. Here, the transition region is investigated by direct imaging of the wall…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
The magnetoresistance (MR) associated with domain boundaries has been investigated in microfabricated bcc Fe (0.65 to 20 $\mu$m linewidth) wires with controlled stripe domains. Domain configurations have been characterized using magnetic…
We perform a study of domain walls in Co/Ir$_n$/Pt(111) (n = 0,1,...,6) films by a combined approach of first-principles calculations and spin dynamics simulations. We determine the tensorial exchange interactions and the magnetic…
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…
In spiral multiferroics, magnetism induces ferroelectricity, thus holding a promise for novel memory devices where an electric field switches magnetic bits. However, such a switching process, in which magnetic domain walls are moved…
Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that…
The Fractional Fourier Transform (FRT) corresponds to an arbitrary-angle rotation in the phase space, e.g. the time-frequency (TF) space, and generalizes the fundamentally important Fourier Transform. FRT applications range from classical…
Technological progress in material synthesis, as well as artificial realization of condensed matter scenarios via ultra-cold atomic gases in optical lattices or epitaxial growth of thin films, is opening the gate to investigate a plethora…
Ferroic domain walls could play an important role in microelectronics, given their nanometric size and often distinct functional properties. Until now, devices and device concepts were mostly based on mobile domain walls in ferromagnetic…