Related papers: Internal mechanical dissipation mechanisms in amor…
We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216 atom model for pure amorphous silicon (a-Si) has been employed as a…
The search for highly coherent degrees of freedom in noisy solid-state environments is a major challenge in condensed matter. In disordered dipolar systems, such as magnetically doped insulators, compact clusters of two-level systems (TLS)…
We consider an electron interacting locally with two-level systems (TLSs) as an archetypal model for charge transport in the presence of inelastic scatterers. To assess the importance of quantum effects in the optical and d.c. conductivity…
The relevance of tunneling two-level systems (TLS) for electron dephasing in metals is analyzed. We demonstrate that if the concentration of TLS is sufficient to cause the observed dephasing rate, one also should expect quite substantial…
Two-level system (TLS) defects in dielectrics cause decoherence in superconducting circuits, yet their origin, frequency distribution, and dipole moments remain poorly understood. Current probes, primarily based on qubits or resonators,…
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated…
The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline…
We demonstrate a new method to directly manipulate the state of individual two-level systems (TLS) in phase qubits. It allows one to characterize the coherence properties of TLS using standard microwave pulse sequences, while the qubit is…
In this paper we discuss the application of current it ab initio computer simulation techniques to hydrogenated amorphous silicon (a-Si:H). We begin by discussing thermal fluctuation in the number of coordination defects in the material,…
We point out a novel, non-universal contribution to the dephasing rate 1/\tau_\phi \equiv \gamma_\phi of conduction electrons in metallic systems: scattering off non-magnetic two-level systems (TLSs) having almost degenerate Kondo ground…
We analyze data on the critical current and normal state resistance noise in Josephson junctions and argue that the noise in the critical current is due to a mechanism that is absent in the normal state. We estimate the noise produced by…
We measure the dissipation and frequency shift of a magnetically coupled cantilever in the vicinity of a silicon chip, down to $25$ mK. The dissipation and frequency shift originates from the interaction with the unpaired electrons,…
The dissipative quantum dynamics of an anharmonic oscillator is investigated theoretically in the context of carbon-based nano-mechanical systems. In the short-time limit, it is known that macroscopic superposition states appear for such…
Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which…
Numerical studies of amorphous silicon in harmonic approximation show that the highest 3.5% of vibrational normal modes are localized. As vibrational frequency increases through the boundary separating localized from delocalized modes, near…
The position noise spectra of six drums on a single chip were measured on a single cooldown below 1.3 kelvin. Cryostat temperatures as low as 0.7 mK were achieved. The temperature dependence of the resonance frequency and linewidth of the…
Under strong drives, which are becoming necessary for fast high-fidelity operations, transmons can be structurally unstable. Due to chaotic effects, the computational manifold is no longer well separated from the remainder of the spectrum,…
Preparing realistic atom-scale models of amorphous silicon (a-Si) is a decades-old condensed matter physics challenge. Herein, we combine the Activation Relaxation Technique nouveau (ARTn) to a Moment Tensor Potential (MTP) to generate…
The structural relaxation of amorphous materials is described as arising from the superposition of elementary processes with varying activation energies. We show that it is possible to obtain the kinetic parameters of these processes from…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…