Related papers: Novel STT/SHE MTJ Compact Model Compatible with NG…
As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests…
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or…
Bio-inspired hardware holds the promise of low-energy, intelligent and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for bio-medical…
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
Superparamagnetic magnetic tunnel junctions (sMTJs) are promising components for true random number generation and probabilistic computing. Achieving high-frequency fluctuation while maintaining reliable control over output level is…
The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer,…
Neural networks and neuromorphic computing play pivotal roles in deep learning and machine vision. Due to their dissipative nature and inherent limitations, traditional semiconductor-based circuits face challenges in realizing ultra-fast…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
We present a novel hybrid CMOS-MQCA architecture using multi-layer Spintronic devices as computing elements. A feasibility study is presented with 22nm CMOS where new approaches for spin transfer torque induced clocking and read-out scheme…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
Over the last two decades, non-trivial magnetic textures, especially the magnetic skyrmion family, have been extensively explored out of fundamental interest and for diverse possible applications. Given the possible technological and…
Stochastic spiking neural networks based on nanoelectronic spin devices can be a possible pathway to achieving "brainlike" compact and energy-effcient cognitive intelligence. The computational model attempt to exploit the intrinsic device…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The…