Related papers: Giant and Reversible Electronic Structure Evolutio…
We use angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic structure of CaFe$_2$As$_2$ in previously unexplored collapsed tetragonal (CT) phase. This unusual phase of…
Two-dimensional (2D) materials enable new types of magnetic and electronic phases mediated by their reduced dimensionality like magic-angle induced phase transitions, 2D Ising antiferromagnets and ferromagnetism in 2D atomic layers and…
Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible…
Chemical substitution plays a key role in controlling the electronic and magnetic properties of complex materials. For instance, in EuO, carrier doping can induce a spin-polarized metallic state, colossal magnetoresistance, and…
Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to…
Finescale probes of many complex electronic materials have revealed a non-uniform nanoworld of sign-varying textures in strain, charge and magnetization, forming meandering ribbons, stripe segments or droplets. We introduce and simulate a…
We use resonant elastic x-ray scattering to determine the evolution of magnetic order in EuCd$_2$As$_2$ below $T_\textrm{N}=9.5$\,K, as a function of temperature and applied magnetic field. We find an A-type antiferromagneticstructure with…
We propose that the machinability of hard ceramics can be improved by reversible electrochemical doping. On the example of TiO2, we show in a combined density functional theory-molecular dynamics computational study that a small amount of…
Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among…
We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the…
We elucidate the transport properties and electronic structures of distorted rutile-type WO2. Electrical resistivity and Hall effect measurements of high-quality single crystals revealed the transport property characteristics of topological…
We report the effect of 4f electron doping on structural, electrical and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)xPdBi (x =0, 0.2, 0.5, 1) thin films grown by pulsed laser deposition. The Dy doping leads to lattice…
Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form…
An anisotropic Kondo semiconductor CeOs$_2$Al$_{10}$ exhibits an unusual antiferromagnetic order at rather high transition temperature $T_0$ of 28.5 K. Two possible origins of the magnetic order have been proposed so far, one is the Kondo…
V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the…
We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the…
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%.…
We theoretically investigate the doping evolution of the electronic state of high-Tc cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock…
The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the…
We report on detailed structural, electronic and magnetic studies of GdMn$_{1-x}$Cr$_x$O$_3$ for Cr doping levels 0 $\le$ $x$ $\le$ 1. In the solid solutions, the Jahn-Teller distortion associated with Mn$^{3+}$ ions gives rise to major…