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We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…

Materials Science · Physics 2007-05-23 Rajeev Ahluwalia , Turab Lookman , Avadh Saxena , Wenwu Cao

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

Materials Science · Physics 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…

Field-induced domain wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant…

Disordered Systems and Neural Networks · Physics 2021-05-18 Yongtao Liu , Roger Proksch , Chun Yin Wong , Maxim Ziatdinov , Sergei V. Kalinin

Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…

Materials Science · Physics 2025-06-02 Kamyar Barakati , Yu Liu , Hiroshi Funakubo , Sergei V. Kalinin

Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…

Materials Science · Physics 2017-01-12 Meng Ye , David Vanderbilt

The switching of electric polarization induced by electric fields -a fundamental functionality of ferroelectrics- is closely associated with the motions of the domain walls that separate regions with distinct polarization directions.…

Materials Science · Physics 2014-01-10 F. Kagawa , S. Horiuchi , N. Minami , S. Ishibashi , K. Kobayashi , R. Kumai , Y. Murakami , Y. Tokura

Emergent functionalities of structural and topological defects in ferroelectric materials underpin an extremely broad spectrum of applications ranging from domain wall electronics to high dielectric and electromechanical responses. Many of…

It is demonstrated based on continuum mechanics modeling and simulation that it is possible to obtain polycrystalline ceramic ferroelectric materials which beggars single crystals in electromechanical properties. The local inhomogeneities…

Materials Science · Physics 2010-11-15 K. P. Jayachandran , J. M. Guedes , H. C. Rodrigues

Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied…

Materials Science · Physics 2022-06-27 Yuri A. Genenko , Sergey Zhukov , Maohua Zhang , Ke Wang , Jurij Koruza

Polarization switching mechanisms in ferroelectric materials are fundamentally linked to local domain structure and presence of the structural defects, which both can act as nucleation and pinning centers and create local electrostatic and…

Disordered Systems and Neural Networks · Physics 2021-02-02 Sergei V. Kalinin , Kyle Kelley , Rama K. Vasudevan , Maxim Ziatdinov

Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…

Mesoscale and Nanoscale Physics · Physics 2017-02-23 Gabriele De Luca , Marta D. Rossell , Jakob Schaab , Nathalie Viart , Manfred Fiebig , Morgan Trassin

The design of the interfacial bondings at metal-oxide interfaces yields exciting new phenomena and can be a route to sustain, and even promote, ferroelectricity at the nanoscale. We study the impact of these interfaces on the nature of the…

Materials Science · Physics 2014-08-12 A. Cano , A. P. Levanyuk

The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization…

Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…

Materials Science · Physics 2021-03-22 Jun Chen , Shuai Dong

Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…

Mesoscale and Nanoscale Physics · Physics 2022-10-07 Laurent Molino , Leena Aggarwal , Vladimir Enaldiev , Ryan Plumadore , Vladimir Falko , Adina Luican-Mayer

Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…

Mesoscale and Nanoscale Physics · Physics 2011-10-07 H. Lu , C. -W. Bark , D. Esque de los Ojos , J. Alcala , C. -B. Eom , G. Catalan , A. Gruverman

Ferroelectric polarization switching underpins the functional performance of a wide range of materials and devices, yet its dependence on complex local microstructural features renders systematic exploration by manual or grid-based…

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…

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