Related papers: Quantum Hall Goos-H\"anchen effect in graphene
The quantum Hall effect (QHE) originates from discrete Landau levels forming in a two-dimensional (2D) electron system in a magnetic field. In three dimensions (3D), the QHE is forbidden because the third dimension spreads Landau levels…
Quantum oscillations in graphene is discussed. The effect of interactions are addressed by Kohn's theorem regarding de Haas-van Alphen oscillations, which states that electron-electron interactions cannot affect the oscillation frequencies…
Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from…
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven…
The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently…
Landau level quantization in graphene reflects the Dirac nature of its quasiparticles and has been found to exhibit an unusual integer quantum Hall effect. In particular the lowest Landau level can be thought as shared equally by electrons…
Monolayer graphite films, or graphene, have quasiparticle excitations that can be described by 2+1 dimensional Dirac theory. We demonstrate that this produces an unconventional form of the quantized Hall conductivity $\sigma_{xy} = - (2…
Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping…
Motivated by a recent experiment (Sanchez-Yamagishi et.al, arXiv:1602.06815) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a…
The combination of the unique properties of graphene with spin polarization and magnetism for the design of new spintronic concepts and devices has been hampered by the small Coulomb interaction and the tiny spin-orbit coupling of carbon in…
The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the…
Graphene, through the coexistence of large cyclotron gaps and small spin and valley gaps, offers the possibility to study the breakdown of the quantum Hall effect across a wide range of energy scales. In this work, we investigate the…
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum…
The recent discovery of robust quantum anomalous Hall (QAH) effect in rhombohedral multilayer graphene (RMG) aligned with hexagonal boron nitride (hBN) has established a highly versatile platform for correlated topological matter. This…
The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The…
The fate of integer quantum Hall effect (IQHE) at weak magnetic field is studied numerically in the presence of {\it correlated} disorders. We find a systematic {\it float-up} and {\it merging} picture for extended levels on the low-energy…
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains.…
We investigate the Goos-H\"{a}nchen shifts in reflection for a light beam within a graphene structure, utilizing the Fizeau drag effect induced by its massless Dirac electrons in incident light. The magnitudes of spatial and angular shifts…
We present a theoretical study of the spatial Goos-H\"anchen shift occurring at the interface between two different photonic graphene lattices. Numerical simulations of light propagation in such a wave guiding system are also presented to…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…