Related papers: A Temperature Independent Readout Circuit for ISFE…
Recent clinical evidence shows a correlation between linear energy transfer (LET) and tumor control in carbon ion radiotherapy. This prompts the direct inclusion of LET into the treatment planning. Currently, LET is mainly extracted from…
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…
As the technology node continues to shrink, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become valid candidates for the 3nm and sub-nanometre nodes. However, due to the shrinking device size, self-heating and…
Transition-edge sensor (TES) is a highly sensitive device that is capable of detecting extremely low levels of energy. It is characterised by low noise performance and high energy resolution. A mature method for reading out TES signal is…
Most chip designers outsource the manufacturing of their integrated circuits (ICs) to external foundries due to the exorbitant cost and complexity of the process. This involvement of untrustworthy, external entities opens the door to major…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
A front-end readout electronics system has been developed for silicon strip detectors. The system uses an application specific integrated circuit (ASIC) ATHED to realize multi-channel E&T measurement. The slow control of ASIC chips is…
Here, an ultra-small size, simple and inexpensive metal oxide semiconductor field effect transistor (MOSFET)-integrated needle type EGFET pH microsensor was fabricated. The EGFET pH microsensor has the potential to be applied to fast and…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
CUPID is a next-generation neutrinoless double-beta decay experiment that will require cryogenic light detectors to improve background suppression, via the simultaneous readout of heat and light channels from its scintillating crystals. In…
Sensor nodes and IoT systems require blocks that not only consume low power but also have good accuracy. Voltage reference generators are also considered important building blocks in sensor interface circuits. This paper presents a solution…
Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…
We present a novel approach to the readout of ionization detectors. The solution allows to minimize the number of components and the space occupation close to the detector. This way a minimal impact is added on the radioactive background in…
We introduce a thermodynamically consistent, minimal stochastic model for complementary logic gates built with field-effect transistors. We characterize the performance of such gates with tools from information theory and study the…
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…
There has been a recent tremendous interest in label-free detection of biomarkers which is a critical enabler of point-of-need diagnostics. A low-power, small form factor, multiplexed wearable system is proposed for continuous detection of…
3D integrated circuit (3D-IC) technology gained acceptance due to the ability to achieve extremely high level of integration, where hundreds of ICs are stacked vertically. Such level of integration can result in local power dissipation of…
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating…
We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and…
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will…