Related papers: Current-driven writing process in antiferromagneti…
Spin superfluidity, a phenomenon enabling low dissipative spin transport analogous to superfluidity in liquid helium and superconductivity in electronic systems, has remained a theoretical concept. To realize the spin superfluidity in an…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport…
Current-induced torques on ferromagnetic nanoparticles and on domain walls in ferromagnetic nanowires are normally understood in terms of transfer of conserved spin angular momentum between spin-polarized currents and the magnetic…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
In a collinear antiferromagnet, spins tend to cant towards the direction of an applied magnetic field, thereby decreasing the energy of the system. The canting angle becomes negligible when the magnetic field is small so that the induced…
In information technology devices, current-driven state switching is crucial in various disciplines including spintronics, where the contribution of heating to the switching mechanism plays an inevitable role. Recently, current-driven…
Antiferromagnets with vanishingly small (or zero) magnetization are interesting candidates for spintronics applications. In the present paper we propose two models for description of the current-induced phenomena in antiferromagnetic…
We demonstrate the possibility to drive an antiferromagnet domain-wall at high velocities by field-like N\'{e}el spin-orbit torques. Such torques arise from current-induced local fields that alternate their orientation on each sub-lattice…
The electrical conductivity of parallel plate capacitors, with ferroelectric lithium niobate as the dielectric layer, can be extensively and progressively modified by the controlled injection of conducting domain walls. Domain wall-based…
The current-driven domain wall motion in a ratchet memory due to spin-orbit torques is studied from both full micromagnetic simulations and the one dimensional model. Within the framework of this model, the integration of the anisotropy…
Nucleation of domain walls by current-driving a single domain wall, confined to the junction area of two symmetrical strips, is investigated using systematic micromagnetic simulations. Secondary domain walls (equivalently, bits encoded in…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has…
Pulsed domain wall movement is studied here in Ni80Fe20 nanowires on SiO2, using a fully integrated electrostatic, thermoelectric, and micromagnetics solver based on the Landau-Lifshitz-Bloch equation, including Joule heating, anisotropic…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…