Related papers: Zero-average bias bidirectional single-electron cu…

Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…

Using the wave nature of the electrons, we demonstrate that a transverse spin current can be generated simply by the diffraction through a single slit in the spin-orbital coupling system of the two-dimensional electron gas. The diffracted…

We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system…

The dynamics of a single spin embedded in a the tunnel junction between ferromagnetic contacts is strongly affected by the exchange coupling to the tunneling electrons. Moment reversal of the local spin induced by the bias voltage across…

We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC…

We propose a ``spin-guide'' source for generation of electric currents with a high degree of spin polarization, allowing long-distance transmission of the spin-polarization. In the spin-guide scheme proposed here, a non-magnetic conducting…

We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under…

We propose a spin cell based on photon-assisted tunneling through a conventional semiconductor barrier. The Dresselhaus spin-orbit interaction is included to break the spin rotation symmetry. Due to the in-plane electric field induced…

Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport.…

We propose a spin current diode which can work even in a small applied bias condition (the linear-response regime). The prototypal device consists of a hornlike electron waveguide with Rashba spin-orbit interaction, which is connected to…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

We present a microscopic study of single-electron tunneling in nanomechanical double-barrier tunneling junctions formed using a vibrating scanning nanoprobe and a metallic nanoparticle connected to a metallic substrate through a molecular…

We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…

We have studied the rectified current in a geometrically symmetric nano-electromechanical shuttle with periodic kicks and sinusoidal ac bias voltages. The rectified current is exactly zero under the geometrical symmetry which is generated…

We report on the injection of quantized pure spin current into quantum conductors. In particular, we propose an on demand single spin source generated by periodically varying the gate voltages of two quantum dots that are connected to a two…

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…

Current flow in electronic devices can be asymmetric with bias direction, a phenomenon underlying the utility of diodes and known as non-reciprocal charge transport. The promise of dissipationless electronics has recently stimulated the…

An unpolarized charge current passing through a chaotic quantum dot with spin-orbit coupling can produce a spin polarized exit current without magnetic fields or ferromagnets. We use random matrix theory to estimate the typical spin…

We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…

We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…