Related papers: Pushing the room temperature continous-wave operat…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $\mu$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb…
We present an interband cascade laser (ICL) emitting at 5.2 {\mu}m consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 {\mu}m. They employ a hybrid cladding architecture with the same geometry and inner claddings…
High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed…
Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated…
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just…
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9$\mu$m are reported. Thick electroplated gold layer was deposited on top of the laser to improve heat dissipation. With one facet high reflection coated, the…
The intensity noise of a laser source represents one of the key factors limiting the ultimate sensitivity in laser-based systems for sensing and telecommunication. For advanced applications based on interferometry, the availability of a…
We present a two-well terahertz (THz) quantum cascade laser designed for high temperature operation based on the InGaAs/AlInAs material system. The lighter effective mass and higher energy barriers increase the gain at high temperatures (T…
Many precision applications in the mid-infrared spectral range have strong constraints based on quantum effects that are expressed in particular noise characteristics. They limit, e.g., sensitivity and resolution of mid-infrared imaging and…
Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
We investigate triple V-shaped type-II quantum wells designed to emit at 6-9 {\mu}m wavelength range, consisting of three InAs(Sb) electron quantum wells and two Ga0.6In0.4Sb hole quantum wells. The wells' composition and thicknesses are…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
Terahertz quantum cascade lasers based on InGaAs wells and quaternary AlInGaAs barriers were measured in magnetic field. This study was carried out on a four quantum well active region design with photon energy of 14.3 meV processed both…
The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3{\omega} method. Thermal conductivity is reduced by up to 2 orders of magnitude relative to the GaSb bulk substrate.…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…