Related papers: Low-Power consumption Franz-Keldysh effect plasmon…
We demonstrated a Germanium-on-Silicon photodetector utilizing an asymmetric-Fabry-Perot resonator with 0.08 fF capacitance. The measurements at 1315.5 nm show 0.72 nA (3.40 nA) dark current, 0.93 A/W (0.96 A/W) responsivity, 36 Gb/s (38…
Compact electro-optic (EO) modulators with large extinction ratios, low-switching energies, and high operation speeds are desirable for integrated photonic and linear optical computing. Traditional 3D semiconductors and dielectrics are…
Extremely low-loss silicon nitride integrated circuits is a potential platform for a growing number of frontier applications in quantum technologies, high-performance and analog computing, nonlinear optics, light detection and ranging…
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a…
In this paper, a numerical solution for a plasmonic absorption modulator is presented with a six-layer structure consisting of an air superstrate, a gold layer, a barium titanate layer, a n type silicon layer, a gold layer and a thin-shell…
Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength division multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters, and detectors)…
A low voltage, wide bandwidth compact electro-optic modulator is a key building block in the realization of tomorrow's communication and networking needs. Recent advances in the fabrication and application of thin-film lithium niobate, and…
Electro-optic modulators for next-generation optical interconnects require low loss-efficiency products, compact footprints, high modulation efficiency, broad bandwidths, and low losses. Here we propose and demonstrate a low-loss…
We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity…
We demonstrate a low-loss integrated electro-optic Mach-Zehnder modulator in thin-film lithium tantalate at 737 nm, featuring a low half-wave voltage-length product of 0.65 V$\cdot$cm, an extinction ratio of 30 dB, low optical loss of 5.3…
Surface plasmon polaritons enable light concentration within subwavelength regions, opening thereby new avenues for miniaturizing the device and strengthening light-matter interactions. Here we realize effective electro-optic modulation in…
Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes,…
One of the technical barriers impeding the wide applications of integrated photonic circuits is the lack of ultracompact, high speed, broadband electro-optical (EO) modulators, which up-convert electronic signals into high bit-rate photonic…
Dielectrics' refractive index limits photonics miniaturization. By coupling light to metal's free electrons, plasmonic devices achieve deeper localization, which scales with the device geometric size. However, when localization approaches…
There are many researches reported in using Germanium in Silicon based lasers but acquiring this potential for a nanolaser may also be important for development of a CMOS compatible plasmon source. In this paper, a Ge/SiGe multiple quantum…
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power…
Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for…
Performance optimization associated with optical modulators requires reasonably accurate predictive models for key figures of merit. Interleaved PN-junction topology offers the maximum mode/junction overlap and is the most efficient…
We propose a method for generating Fano resonance in a standalone silicon nanobeam cavity which eliminates the inconvenience from the unexpected side-coupled bus waveguide and unlocks new opportunities to develop ultra-compact and…
Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic modulation. Its CMOS-compatibility could…