Related papers: Layer Zero-Line Modes in Antiferromagnetic Topolog…
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
The enhancement of interfacial Dzyaloshinskii-Moriya Interaction (DMI) in magnetic multilayers results in the stabilization of topological spin textures like chiral domain walls and skyrmions. Here we report on the evaluation of…
The discovery of an intrinsic antiferromagnetic topological insulator (AFM-TI) in MnBi$_2$Te$_4$ has attracted intense attention, most of which lies on its electrical properties. In this paper, we report electronic, thermal, and…
Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi$_2$Se$_3$-based…
Recent advances in nanofabrication make it possible to produce multilayer nanostructures composed of ultrathin film materials with thickness down to a few monolayers of atoms and lateral extent of several tens of nanometers. At these…
In addition to the weak antilocalization cusp observed in the magnetoresistance (MR) of topological insulators at low temperatures and low magnetic fields, we find that the high-field MR in Bi2Te2Se is linear in field. At fields up to B=14T…
The emergence of magnetism in quantum materials creates a platform to realize spin-based applications in spintronics, magnetic memory, and quantum information science. A key to unlocking new functionalities in these materials is the…
The layer-dependent Hamiltonians of parallel-stacked MoTe$_2$ and WSe$_2$ homobilayer moir\'e materials are topologically non-trivial, both in real space and in momentum space, and have been shown to support integer and fractional quantum…
The motion of a N\'eel-like ${180}^{\circ}$ domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn$_2$Au is explored. Through an effective version of the two sublattice nonlinear…
We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…
We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent…
MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are antiferromagnetic topological insulators belonging to the MnBi$_{2n}$Te$_{3n+1}$ series, where structural layering provides a natural route to tune magnetic interaction in van der Waals magnets. Despite…
Topological crystalline insulators are known to support multiple Majorana zero modes (MZMs) at a single vortex, their hybridization is forbidden by a magnetic mirror symmetry $M_T$. Due to the limited energy resolution of scanning tunneling…
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and…
We employ group theory to study the properties of the lattice vibrations and magnetic order in the antiferromagnetic topological insulator MnBi$_2$Te$_4$, both in bulk and few-layer form. In the paramagnetic phase, we obtain the…
At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and…
We have studied the domain wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness is varied to control the type of domain walls via changes in the interfacial Dzyaloshinskii Moriya interaction. We find a nearly constant…
Topological surface states with intrinsic magnetic ordering in the MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ compounds have been predicted to host rich topological phenomena including quantized anomalous Hall effect and axion insulator state. Here…
We carry out large-scale micromagnetic simulations which demonstrate that due to topological constraints, internal domain walls (Bloch lines) within extended domain walls are more robust than domain walls in nanowires. Thus, the possibility…