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Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields…
Magnetic topological insulators (MTIs) have received a lot of attention due to the existence of various quantum phenomena such as quantum anomalous Hall effect (QAHE) and topological magnetoelectric effect, etc. The intrinsic…
Surfaces of multilayer semiconductors typically have regions of atomically flat terraces separated by atom-high steps. Here we investigate the properties of the low-energy states appearing at the surface atomic steps in \snte. We identify…
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be…
Magnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall (QAH) effect and Majorana modes, etc. Their successful material realization is thus essential for our…
The magnetic topological insulator, MnBi$_2$Te$_4$, shows metallic behavior at zero magnetic fields (antiferromagnetic phase, AFM) in thin film transport, which coincides with gapless surface states observed by angle-resolved photoemission…
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases.…
Topological insulators are a new class of materials which have gapped spectra in the bulk, but are accompanied by topologically protected gapless excitations at the surface (edge) of the system. These phenomena have a close relationship…
Topological insulators (TIs) show rich phenomena and functions which can never be realized in ordinary insulators. Most of them come from the peculiar surface or edge states. Especially, the quantized anomalous Hall effect (QAHE) without an…
With topological materials being billed as the key to a new generation of nanoelectronics via either functional real-space topological structures (domain walls, skyrmions etc.) or via momentum-space topology (topological insulators),…
Being the first intrinsic antiferromagnetic(AFM) topological insulator(TI), MnBi2Te4 is argued to be a topological axion state in its even-layer form due to the antiparallel magnetization between the top and bottom layers. Here we combine…
Altermagnets are time-reversal broken antiferromagnets, where the $z$ component of the N\'{e}el vector is detectable by anomalous Hall effects. On the other hand, recently proposed $p$-wave magnets are time-reversal preserved…
We investigate magnetic domain walls in a single fcc Mn layer on Re(0001) employing spin-polarized STM, atom manipulation, and spin dynamics simulations. The low symmetry of the row-wise antiferromagnetic (1Q) state leads to a new type of…
The antiferromagnetic (AF) compound MnBi$_{2}$Te$_{4}$ is suggested to be the first realization of an antiferromagnetic (AF) topological insulator. Here we report on inelastic neutron scattering studies of the magnetic interactions in…
Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric…
The layered topological insulator MnBi$_2$Te$_4$ has attracted great interest recently due to its intrinsic antiferromagnetic order, potentially hosting various topological phases. By temperature-dependent infrared spectroscopy over a broad…
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in…
We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…
We examine magnetic domain patterns in symmetric [Co/Ni]$_M$ and asymmetric [Pt/(Co/Ni)$_M$/Ir]$_N$ multi-layers using Fresnel mode Lorentz transmission electron microscopy (LTEM). In the symmetric multi-layer, where the…
We examine the combined effects of interlayer exchange coupling (IEC) and the interfacial Dzyaloshinskii-Moriya Interaction (DMI) on the structure of magnetic domain walls in fully compensated synthetic anti-ferromagnets (SAFs). Ir-based…