Related papers: Ultra-compact plasmonic modulator for optical inte…
We proposed multilayered graphene (Gr)-based surface plasmon resonance-induced high-performance terahertz (THz) modulators with tunable resonance frequencies. Several THz plasmonic modulators based on Gr metamaterials were previously…
Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index…
This article presents the development of a cost-effective and efficient electronic module for silicon photomultipliers (SiPM). The electronic module combines essential functionalities, such as a high voltage power supply, a preamplifier,…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…
Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by the attributes of terahertz…
Unlike conventional optics, plasmonics enables unrivalled concentration of optical energy well beyond the diffraction limit of light. However, a significant part of this energy is dissipated as heat. Plasmonic losses present a major hurdle…
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a…
The authors' recent Nature Photonics article titled "Compact Nano-Mechanical Plasmonic Phase Modulators" [1] is reviewed which reports a new phase modulation principle with experimental demonstration of a 23 {\mu}m long non-resonant…
Optical isolators, while commonplace in bulk- and fiber-optic systems, remain a key missing component in integrated photonic systems. Isolation using magneto-optic effects has been difficult to implement due to fabrication restraints,…
Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes,…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
A novel thin-film LiNbO3 (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 {\mu}m, resulting in a record low…
Plasmonics can be used to improve absorption in optoelectronic devices and has been intensively studied for solar cells and photodetectors. Graphene has recently emerged as a powerful plasmonic material. It shows significantly less losses…
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert…
We propose a compact single-plasmon source operating at near-infrared wavelengths on an integrated III-V semiconductor platform, with a thin ridge waveguide serving as the plasmon channel. By attaching an ultra-small cavity to the channel,…
Rapid progress in electrically-controlled plasmonics in solids poses a question about effects of electronic reservoirs on the properties of plasmons. We find that plasmons in electronically open systems [i.e. in (semi)conductors connected…
We have demonstrated efficient intersubband electroabsorption in InGaAs/InAlGaAs/InAlAs step quantum wells grown by metal-organic vapor phase epitaxy (MOVPE). An absorption modulation of 6 dB at $\lambda=6.0 \mu$m due to Stark shift of the…
The speed of ultra-fast optical switches is generally limited by the intrinsic electronic response time of the material. Here we show that the phase content of selected electromagnetic pulses can be used to measure the timescales…
For integrated optical devices, realistic utilization of the superior wave-matter interaction offered by plasmonics is typically impeded by optical losses, which increase rapidly with mode volume reduction. Although coupled-mode plasmonic…